Abstract:In the past years, light-emitting devices (LEDs) based on erbium (Er)-doped insulators or wide-bandgap semiconductors have received intensive attention because the intra-4f transition (4I13/2→4I15/2) of Er3+ ions at ～ 1540 nm has potential applications in the optical interconnection for silicon-based circuits. The LEDs with rare-earth (RE)-doped SiOx (x ≤ 2) or SiNx (x ≤ 4/3) films have been well investigated as the silicon-compatible emitters. However, they suffer difficulty in injecting current and easing fatigue. In this context, the LEDs with RE-doped oxide semiconductors have been extensively investigated out of research interest in recent years. Among the oxide semiconductors, TiO2 is a desirable host for RE-doping because it is transparent for visible and infrared light, and cost-effective, and has considerably high RE solubility. In our previous work (Zhu C, Lü C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl. Phys. Lett. 107 131103), we have realized erbium (Er)-related visible and near-infrared (～ 1540 nm) electroluminescence (EL) from the LED with a structure of ITO/TiO2:Er/SiO2/n+-Si, in which TiO2:Er refers to the Er-doped TiO2 film as the light-emitting layer. In this work, we co-dope ytterbium (Yb) into the TiO2:Er film in the aforementioned LED to significantly enhance the Er-related visible and near-infrared EL. It is revealed that a certain amount of Yb co-doping enables the TiO2:Er film to transform its crystal phase from anatase to rutile. Such a phase transformation reduces the symmetry of crystal field surrounding the Er3+ ions incorporated into the TiO2 host. Moreover, the substitution of over-sized Yb3+ ions for Ti4+ ions in the TiO2 host leads to the distortion of the crystal field around the Er3+ ions. The aforementioned symmetry-reduction and distortion of the crystal field increase the probabilities of the intra-4f transitions of Er3+ ions. Due to the aforementioned reason, the Yb co-doping into the TiO2:Er film remarkably enhances the EL from the corresponding LED. It is believed that the strategy of Yb-codoping can be adopted to enhance the EL from the LEDs with other RE-doped TiO2 films.

Energy Transfer among Rare Earth Ions Induced by Annealing Process of Tm-Er Codoped Aluminum Oxide Thin Films

Chemical Combustion Synthesis and Up-Conversion Properties of Er3+ Doped Yb3Al5O12 Powder

Temperature-dependent Photoluminescence Spectra of Er–Tm-codoped Al2O3 Thin Film

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Light-Emitting Devices Based on Erbium-Doped Tio2/P(+)-Si Heterostructures: Engineering of Electroluminescence Via Aluminum Co-Doping

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Yb3+ → Er3+ Energy Transfer in Al2O3 and Temperature Characteristic of Near-Infrared Photoluminescence

Energy Transfer and Frequency Upconversion in Er3+-Yb3+ Codoped Oxy-Fluoro-tungstosilicate Glasses

Electroluminescence from Light-Emitting Devices with Erbium-Doped Tio2 Films: Enhancement Effect of Yttrium Codoping

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Temperature-dependent photoluminescence spectra of Er-Tm codoped calcium boroaluminate glasses.

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Electrophoretic Deposition and Photoluminescent Properties of Eu-doped BaTiO3thin Film from a Suspension of Monodispersed Nanocrystallites

Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers

Infrared emission properties and energy transfer between Tm^3+ and Ho^3+ in lanthanum aluminum germanate glasses

Realization of Modulating Broadband Emission from Er–Tm Codoped Calcium Boroaluminate Glasses by Dual-Wavelength Pumping

Color-tunable Electroluminescence from Eu-doped TiO_2/p^+-Si Heterostructured Devices: Engineering of Energy Transfer

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Enhanced ∼2 μm Emission of Tm3+ in Lu2O3 by Addition of a Trace Amount of Er3

Photoluminescence Properties of Er3+-doped Al2O3 Film Synthesized from Er-ion-implanted Γ-Alooh Xerogel