Abstract:We report the dependence of antiferromagnetism on Zn-doping concentration in the newly synthesized $\\mathrm{CeRh}{(\\mathrm{I}{\\mathrm{n}}_{1\\text{\\ensuremath{-}}x}\\mathrm{Z}{\\mathrm{n}}_{x})}_{5}$ single crystal with $x\\ensuremath{\\le}0.023$. X-ray-diffraction measurements showed a smooth decrease of lattice parameters with an increasing Zn concentration, indicating a positive chemical pressure effect. The electrical resistivity, specific heat, and magnetic susceptibility measurements revealed that the antiferromagnetic transition temperature ${T}_{\\mathrm{N}}$ initially decreases from 3.8 K for pure $\\mathrm{CeRhI}{\\mathrm{n}}_{5}$ to 3.1 K at $x=0.012$; then, it becomes flat, remaining at approximately 3.1 K between Zn concentrations of 0.012 and 0.017, and finally, it increases to 3.3 K at 0.023 Zn concentration. These results suggest that the change in the electronic structure induced by Zn doping is more important than the chemical pressure effects with regard to tuning the magnetic order. A study on the electronic structure and pressure tuning of the newly synthesized heavy-fermion compound $\\mathrm{CeRh}{(\\mathrm{I}{\\mathrm{n}}_{1\\text{\\ensuremath{-}}x}\\mathrm{Z}{\\mathrm{n}}_{x})}_{5}$, which does not include a toxic element, is expected to further enhance our understanding of the competing ground states emerging in heavy-fermion systems.

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