Co Doping Effect on the Magnetic Properties of CeO2 Films on Si(111) Substrates
Y. Q. Song,H. W. Zhang,Q. Y. Wen,Hao Zhu,John Q. Xiao
DOI: https://doi.org/10.1063/1.2761847
IF: 2.877
2007-01-01
Journal of Applied Physics
Abstract:Ce 1 − x Co x O 2 − δ films with the stoichiometry of x=0,0.03,0.06,0.1,0.125 were fabricated on Si(111) substrates using O2 assisted pulse laser deposition method. While pure CeO2 film is weak paramagnetism, integration of low Co content of 3at.% introduces ferromagnetim with a giant saturation moment (Ms) of 5μB∕Co at room temperature. Based on the first principle calculation, we attribute the giant magnetic moments to the combined contributions of spin polarized Co, Ce, and O atom with the enhancement of O vacancies. Higher Co content will depress the ferromagnetism, i.e., inverse correlation between Ms and Co contents, which is qualitatively validated by the calculated magnetic moments of Ce1−xCoxO2−δ with different Co content.