Bias-dependent Rectifying Properties of N-N Manganite Heterojunctions La1−xCaxMnO3/SrTiO3:Nb (X=0.65–1)
W. M. Lue,J. R. Sun,D. J. Wang,Y. W. Xie,S. Liang,Y. Z. Chen,B. G. Shen
DOI: https://doi.org/10.1063/1.3021399
IF: 4
2008-01-01
Applied Physics Letters
Abstract:The transport property of n-n type manganite heterojunctions, composed of La1−xCaxMnO3 films (x=0.6, 0.75, 0.85, and 1) and 0.05 wt % Nb-doped SrTiO3, has been experimentally studied. Different from p-n junctions, the rectifying behavior of which is either thermionic emission/diffusion-dominated or tunneling-dominated; the electronic process in the n-n junction undergoes a nonthermal to thermal transition as bias voltage increases, which is a feature emerging when Ca content exceeds x=0.75 and developing with the increase in x. The two processes can be well described by the Shockley equation and the Newman equation, respectively. Possible mechanisms for this phenomenon are discussed.