Abstract:The high-temperature oxidation mechanism of silicon carbide (SiC) is crucial for designing thermal protection systems in aircraft. This study explored the oxidative chemical reaction processes and mechanism on SiC surface and interfaces within the temperature range of 300-2300 K by using reactive molecular dynamics simulation. The oxygen impact on the silica (SiOx) growth of the SiC surface was analyzed, which shows a progressive increase of silica thickness. The simulation results indicated that the oxidation process of SiC was a typical passive oxidation mechanism. With the environmental temperature rising and oxygen impact, the increase of oxidation thickness on the SiC surface undergoes three oxidizing reaction processes: little chemical adsorption of oxygen molecules on the initial surface, rapid oxidation of silicon and carbon, and dramatic oxidation of the interface between the oxidation layer and SiC. Additionally, this work studied the mechanism of oxidation thickness growth and chemical diffusion of oxygen. The oxidation rate is weakened according to the oxygen atom diffusion barrier effect of silica repulsion. Moreover, the kinetic parameters were statistically calculated by fitting the growth of Si-O bonds and their reaction rate constants. Subsequently, the activation energy and pre-exponential factors were derived by using the Arrhenius equation to model the chemical reaction kinetics of the thermal oxidation process. The chemical reaction behaviors of the two stages could be concluded as follows: (i) in stage I, the initial oxidation is reaction rate limiting; (ii) in stage II, SiC oxidation is limited by both the oxidation reaction rate and the oxygen diffusion coefficient of the oxidation layer. The activation energy of stage II increased compared with stage I due to the oxygen atoms diffusion barrier between the oxidation layers. This study on the oxidation and ablation mechanism of the SiC surface at the atomic scale would provide insight into understanding thermal oxidation behavior and the design of ceramic materials.

Thin Oxidation Study with Various Thermodynamic Parameters

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

Modeling the Initial Stages of Si(100) Thermal Oxidation: An Ab-initio Approach

AN INTERFACE KINETICS STUDY OF OXIDATION PROCESS OF SILICON

Characterization of ultrathin SiO2/Si interface grown by low temperature plasma oxidation

Study Of Dry Oxidation Of Triangle-Shaped Silicon Nanostructure

Thermal-mechanical Coupling Effect on Initial Stage Oxidation of Si(100) Surface

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Microstructural and Functional Stability of Large-Scale SnO2:F Thin Film with Micro-Nano Structure

An Investigation of the Properties of Silicon Oxide Prepared by Oxidation of Silicon in Chlorine-Containing Ambients at 850°C

Evolutions and distributions of Si nanocrystals and other Si oxidation states in Si-implanted SiO2 films

FT-IR study of silicon dioxide films fabricated by rapid thermal oxidation

Revisiting single-crystal silicon oxidation: A comprehensive analysis of crystal structural transformation to SiO2

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Depth Profiling of Si Oxidation States in Si-Implanted SiO<sub>2</sub> Films by X-Ray Photoelectron Spectroscopy

Direct Observation of Ordered Structures During Oxidation of Si(111)

Controllable Si oxidation mediated by annealing temperature and atmosphere

Combining Scanning Tunneling Microscope (STM) Imaging and Local Manipulation to Probe the High Dose Oxidation Structure of the Si(111)-7×7 Surface