Abstract:In a recent study of diffusional creep in polycrystalline thin films deposited on substrates, we have discovered a new class of defects called the grain boundary diffusion wedges (Gao et al., Acta Mat. 47, pp. 2865–2878, 1999). These diffusion wedges are formed by stress driven mass transport between the free surface of the film and the grain boundaries during the process of substrate-constrained grain boundary diffusion. The mathematical modeling involves solution of integro-differential equations representing a strong coupling between elasticity and diffusion. The solution can be decomposed into diffusional eigenmodes reminiscent of crack-like opening displacement along the grain boundary which leads to a singular stress field at the root of the grain boundary. We find that the theoretical analysis successfully explains the difference between the mechanical behaviors of passivated and unpassivated copper films during thermal cycling on a silicon substrate. An important implication of our theoretical analysis is that dislocations with Burgers vector parallel to the interface can be nucleated at the root of the grain boundary. This is a new dislocation mechanism in thin films which contrasts to the well known Mathews-Freund-Nix mechanism of threading dislocation propagation. Recent TEM experiments at the Max Planck Institute for Metals Research have shown that, while threading dislocations dominate in passivated metal films, parallel glide dislocations begin to dominate in unpassivated copper films with thickness below 400 nm. This is consistent with our theoretical predictions. We have developed large scale molecular dynamics simulations of grain boundary diffusion wedges to clarify the nucleation mechanisms of parallel glide in thin films. Such atomic scale simulations of thin film diffusion not only show results which are consistent with both continuum theoretical and experimental studies, but also revealed the atomic processes of dislocation nucleation, climb, glide and storage in grain boundaries. The study should have far reaching implications for modeling deformation and diffusion in micro- and nanostructured materials.

Stress relaxation behavior of Cu thin films in electro-thermo-mechanical multiple fields

Stress Relaxation and Elastic Recovery of Monocrystalline Cu under Water Environment

Surface Relaxation Effect on the Distributions of Energy and Bulk Stresses in the Vicinity of Cu Surface: an Embedded-Atom Method Study

A QuantitativeIn SituSEM Bending Method for Stress Relaxation of Microscale Materials at Room Temperature

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Bending Stress Relaxation of Microscale Single-Crystal Copper at Room Temperature: an in Situ SEM Study

An investigation of the combined size and rate effects on the mechanical responses of FCC metals

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Phase Transition Related Stress in Ferroelectric Thin Films

Microstructure and Residual Stress Gradient Evolution Mechanism of Electronic Copper Strip for Lead Frame

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Constrained Grain Boundary Diffusion in Thin Copper Films

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Stress Relaxation Behavior of an Al–Zn–Mg–Cu Alloy in Simulated Age-Forming Process

The Effects of the Stress Dependence of Atomic Diffusivity on Stress Evolution Due to Electromigration

Stress Relaxation in Sandwiched Si<sub>3</sub>N<sub>4</sub>/Al/Si<sub>3</sub>N<sub>4</sub> Thin Films

Formation Mechanism of Ordered Stress-Relief Patterns in A Free Sustained Cu Film System

Nanotwin Formation In Copper Thin Films By Stress/Strain Relaxation In Pulse Electrodeposition

Quasi In Situ Study on the Slipping Behavior and Residual Stress of Copper Strip

Microstructure and Deformation of Over-Aged Al-Zn-Mg-Cu Alloy with Fine Grains during Multiple Stress Relaxation Tests

Stress Fields Induced by Dislocation Loops in Isotropic CuNb Film- Substrate System