Abstract:A kinetic Monte Carlo (kMC) simulation with a cluster-multiple labeling technique was carried out to study the dynamic behavior of Si-C clusters during the early stage of epitaxial growth. In the model, a crystal lattice was established to fix the physical location of atoms and interatomic bonding. Events, such as adatoms adsorption, diffusion on the planar surface, and attachment to and detachment from clusters of adatoms were considered in the model. The Si and C atoms were treated individually to achieve more elaborate information for dynamic behavior of the clusters in the crystal surface. Moreover, a cluster multiple labeling technique, also known as the Hoshen - Kopelman algorithm was used to identify Si-C clusters. Then the properties of the clusters were calculated and analyzed by the algorithm. The simulation results showed that the number of Si-C clusters gradually decreases with increasing substrate temperature and decreasing deposition rate, and that the average size of Si-C clusters at high temperatures is much larger than that at low temperatures. Furthermore, the Si:C ratio on the growing surface has a significant effect on the surface morphology. At Si-rich conditions, the cluster density is relatively high, and the cluster shape is not homogeneously distributed. While with the increase of C mole fraction, the cluster density gradually decreases and the cluster shape becomes more uniform. Therefore, a higher concentration of C in deposition flux is beneficial to the early stage of nucleation. These findings are consistent with predictions for the case of the epitaxial growth of SiC.

Kinetic Monte Carlo Simulations of Au Clusters on Si(111)-7 × 7 Surface

Atomic Structure and Formation Mechanism of Identically Sized Au Clusters Grown on Si(111)-(7×7) Surface.

Atomistic Study of the Copper Cluster Deposition on Si(001) and Si(111) Surface

Kinetic Monte Carlo Simulation Study of the Early Stages of Epitaxial SiC (0001) Growth

Formation of Ge Nanoclusters on Si(111)-7×7 Surface at High Temperature

Simulation of Ni Cluster Diffusion on Au(1 1 0)-(1 × 2) Surface

Self-organized Arrays of Cd Nanocluster on Si (111)-7×7 Surface

Growth and Characterization of Au Clusters on Alkanethiol Self-Assembled Monolayers

Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A Kinetic Monte Carlo study

Characterisation of the Morphology of Surface-Assembled Au Nanoclusters on Amorphous Carbon

Stm Study Of Au Adsorption On Si(111)-7x7 Surface: Voltage And Temperature Dependence

Growth of Co Nanoclusters on Si 3 N 4 Surface Formed on Si(111)

Deposition of an Energetic Al Cluster on Si(111) Substrate: A Molecular Dynamics Simulation

Molecular dynamics simulation of gold cluster growth during sputter deposition

Self-assembly of Two-Dimensional Nanoclusters Observed with STM: from Surface Molecules to Surface Superstructure

Nucleation and Growth of Ge Nanoclusters on the Si(111)-(7 × 7) Surface Studied by Scanning Tunneling Microscopy

The Growth of Size-Determined Cu Clusters in Nanometer Holes on Au(111) Due to A Balance Between Surface and Electrochemical Energy

Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(7×7) Surface

Self-learning kinetic Monte Carlo Simulations of Self-diffusion of small Ag clusters on Ag (111) surface

Spontaneous Formation of Mn Nanocluster Arrays on A Si(111)-7x7 Surface Observed with Stm

Computational Study on Cu Clusters Supported on Au(010) Surfaces at Atom Scale