Abstract:Hexagonal boron nitride (h-BN) has attracted significant attention due to its exceptional properties. Among various substrates used for h-BN growth, diamond emerges as a more promising substrate due to its high-temperature resistance and superior electrical properties. To reveal the nucleation mechanism of h-BN on the diamond (111) surface and the impact of hydrogenation treatment on this process, we explored the adsorption, diffusion, nucleation morphologies, and predicted nucleation pathways in this process using first-principles calculations based on density functional theory (DFT). Our results indicate that N positioned above the first layer of C and B positioned above the second layer of C enhance the stability of BN clusters. During the growth of BN clusters, there is a geometric transformation from chain-like structures to honeycomb-like structures. The proportion of unhybridized sp2 atoms within BN clusters and geometric symmetry significantly influence h-BN growth. Moreover, computational findings also suggest that to enhance the nucleation rate of h-BN it is essential to inhibit the formation of zigzag chain structures by BN clusters during the early stages of nucleation on a clean diamond surface. Additionally, hydrogenation treatment decreases the binding affinity of B and N on the substrate, facilitating atomic diffusion, and has been identified as an effective approach to facilitate nucleation. Furthermore, hydrogen-terminated diamond acts as an electron donor in the system, which profoundly affects the morphology of growing h-BN and the characteristics of the h-BN/diamond heterostructures. These conclusions are important to understanding and optimizing h-BN growth on diamond and provide a theoretical basis of the construction and application of the h-BN/diamond heterostructure.

Hetero-Epitaxial Diamond Single Crystal Growth on Surface of Cbn Single Crystals at High Pressure and High Temperature

Synthesis of Nano-Polycrystalline Diamond under High Pressure and High Temperature

Epitaxy of cubic boron nitride on (001)-oriented diamond

Superhard solid solutions of diamond and cubic boron nitride

Growth and Characterization of Boron Nitride/Diamond Heterostructures

New Insights into the Mechanism for Growing Cubic Boron Nitride Crystals under High Pressure

Hydrogen-driven boron nitride phase differentiation during the epitaxial nucleation on the diamond (001) surface

Characterization of Single Crystal Diamond Containing c-BN Particle by Confocal Raman Spectroscopy and Investigation of Hetero-Interfaces Using TEM-EELS Analysis

High-Temperature High-Pressure Synchrotron X-Ray Diffraction Study Of C3n4

Nucleation of cubic boron nitride on boron-doped diamond via plasma enhanced chemical vapor deposition

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate.

Direct Synthesis of Sp3‐hybridized BCN Compound by High Pressure and Temperature

The Interface and Mechanical Properties of a CVD Single Crystal Diamond Produced by Multilayered Nitrogen Doping Epitaxial Growth

Interfacial study of cubic boron nitride films deposited on diamond

Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition

Boron-doped diamond growth and characteristics in a Ni-based alloy catalyst system at HPHT conditions

High pressure and high temperature synthesis of a new boron carbide phase

High Pressure High Temperature Synthesis of Highly Boron Doped Diamond Microparticles and Porous Electrodes for Electrochemical Applications

A nucleation site and mechanism leading to epitaxial growth of diamond films

Crystal growth of hexagonal boron nitride (hBN) from Mg-B-N solvent system under high pressure

Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study