Abstract:Nominally phase-pure γ-Ga2O3 was deposited on (100) MgAl2O4 within a narrow temperature window centered at ∼470 °C using metal-organic chemical vapor deposition. The film deposited at 440 °C exhibited either poor crystallization or an amorphous structure; the film grown at 500 °C contained both β-Ga2O3 and γ-Ga2O3. A nominally phase-pure β-Ga2O3 film was obtained at 530 °C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the γ-Ga2O3 film grown at 470 °C revealed a high density of antiphase boundaries. A planar defect model developed for γ-Al2O3 was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of γ-Ga2O3. The presence of the 180° rotational domains and 90° rotational domains of β-Ga2O3 inclusions within the γ-Ga2O3 matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 °C and the same film annealed at 600 °C. The results led to the hypotheses that (i) incorporation of certain dopants, including Si, Ge, Sn, Mg, Al, and Sc, into β-Ga2O3 locally stabilizes the “γ-phase” and (ii) the site preference(s) for these dopants promotes the formation of “γ-phase” and/or γ-Ga2O3 solid solutions. However, in the absence of such dopants, pure γ-Ga2O3 remains the least stable Ga2O3 polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other Ga2O3 polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between γ-Ga2O3 and β-Ga2O3 than all other polymorphs.

High-Pressure and High-Temperature Behaviour of Gallium Oxide

The pressure-induced phase transition of Ga<sub>2</sub>O<sub>3</sub>

Phase transition of NaGaO2 at high pressure and high temperature

Anomalous Behavior and Phase Transformation of Α -Gaooh Nanocrystals under Static Compression

High-Pressure Behavior Of Beta-Ga2o3 Nanocrystals

High-pressure Raman Scattering and X-Ray Diffraction Studies of MgTa2O6

Pressure-Induced Phase Transformations in Cubic Gd2o3

High-pressure Structural Phase Transition and Metallization in Ga2S3 under Non-Hydrostatic and Hydrostatic Conditions Up to 36.4 GPa

Pressure-induced Structure Phase Transition on Y2O3

Reaction Pathways for Α-Ga2o3 and Β-Ga2o3 Phase Transition under Pressure Up to 40 GPa: A First-Principles Study

Structural and Elastic Properties of CaGeO3 Perovskite at High Pressures

A combined XAS and XRD Study of the High-Pressure Behaviour of GaAsO4 Berlinite

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Structural Properties of Β-Ga2o3 Formed by Dry Thermal Oxidization Process on GaN

Structural, Morphological, Ftir and Photoluminescence Properties of Gallium Oxide Thin Films

First-principles Search for High-Pressure Phases Ofgaaso4

X-Ray Diffraction of Cubic Gd2o3/Er under High Pressure

Structural Transition of Gd2o3 : Eu Induced by High Pressure

Pressure-driven Anomalous Thermal Transport Behaviors in Gallium Arsenide

Microstructure, Optical, and Photoluminescence Properties of Β-Ga2o3 Films Prepared by Pulsed Laser Deposition under Different Oxygen Partial Pressures*

Thermal stability and phase transformation of $α$-, $κ(ε)$-, and $γ$-Ga$_2$O$_3$ thin films to $β$-Ga$_2$O$_3$ under various ambient conditions