Low Threshold Lasing Of Gan-Based Vertical Cavity Surface Emitting Lasers With An Asymmetric Coupled Quantum Well Active Region

Jiangyong Zhang,Li E. Cai,Baoping Zhang,ShuiQing Li,Feng Lin,Jingzhi Shang,DuXiang Wang,KeChuang Lin,Jinzhong Yu,Qiming Wang

DOI: https://doi.org/10.1063/1.3030876

IF: 4

2008-01-01

Applied Physics Letters

Abstract:We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed in a half-wavelength (0.5 lambda) length. Lasing action was achieved under optical pumping at room temperature with a threshold pumping energy density of about 6.5 mJ/cm(2). The laser emitted a blue light at 449.5 nm with a narrow linewidth below 0.1 nm and had a high spontaneous emission factor of about 3.0x10(-2). The results indicate that this active region structure is useful in reducing the process difficulties and improving the threshold characteristics of GaN-based VCSELs.