Abstract:An efficient monolithically integrated light source with complementary metal-oxide-semiconductor (CMOS) compatibility remains the missing component to enable Si photonics for various applications. In particular, vertical-cavity-surface-emitting (VCSE) light sources, such as resonant cavity light-emitting diodes (RCLEDs) and vertical-cavity surface-emitting lasers (VCSELs), are strong contenders due to their compact size, circular emission profile with low beam divergence, wafer-scale fabrication compatibility, high bandwidth, and high coupling efficiency to fiber optic cables. We report the first demonstration of 8-in. wafer-scale GeSn/Ge multiple-quantum-well VCSE p-i-n structures and diodes for laser or light-emitting diode (LED) applications in Si photonics by wafer bonding and layer transfer techniques, which are challenging for all-epitaxy routes. The wafer could be 12 in. (300 mm) since the MQW gain medium is grown on a 300 mm Si wafer, and the bonding is wafer-scale. Alternative dielectric layers (SiO2/SiN/SiO2), introduced by wafer bonding, under the emitting structure, serve as the bottom mirror for the vertical cavity. The Ge0.92Sn0.08/Ge MQW layer is utilized to improve the material quality and to confine injected carriers. As a result, more than 8× enhancement of light emission due to the vertical cavity resonance was demonstrated by photoluminescence spectroscopy. Besides, the spectral purity is enhanced by the single-longitudinal-mode cavity. The intensity of light emission is insensitive to the temperature range from 4 to 300 K and even becomes stronger at higher temperatures since the stronger resonant cavity effect at higher temperatures compensates for the drop in light emission efficiency caused by nonradiative centers. The vertical cavity effect on the light emission is further verified by reflectivity spectroscopy and optical simulations. A positive gain can be achieved as indicated by optical gain calculations. Room-temperature electroluminescence and an excellent carrier injection efficiency of the MQW VCSE diode are observed, showing its potential for electrically injected RCLEDs and VCSELs.

In-phase supermode operation in GaN-based vertical-cavity surface-emitting laser

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Room Temperature Continuous Wave Lasing of GaN-based Green Vertical-Cavity Surface-Emitting Lasers

Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure

Over 20% wall plug efficiency of on-wafer GaN-based vertical-cavity surface-emitting laser

Narrow-linewidth operation of folded 1178nm VECSEL with twisted-mode cavity

An Injection-Locked Single-Longitudinal-Mode Fiber Ring Laser with Cylindrical Vector Beam Emission

High-power InGaAs/GaAs VCSEL's Two-Dimension Arrays

Room-temperature continuous-wave operation of green vertical-cavity surface-emitting lasers with a curved mirror fabricated on {20−21} semi-polar GaN

GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform

Low-threshold wavelength-tunable ultraviolet vertical-cavity surface-emitting lasers from 376 to 409 nm

Efficient single-mode oxide-confined GaAs VCSEL's emitting in the 850-nm wavelength regime

Fabrication of GaN-based Vertical Cavity Surface Emitting Lasers

Intracavity Frequency-Doubled Green Vertical External Cavity Surface Emitting Laser

Room-temperature DBR-free VCSEL operation on an InGaN/GaN thin-film platform with a monolithic surface grating

Realization of Directional Single-Mode Lasing by a GaN-based Warped Microring

Single-Mode Vertical Cavity Surface Emitting Laser via High-Order Transverse Mode Expansion

Hexagonal Transverse Coupled Cavity VCSEL Redefining the High-Speed Lasers

4×15 Gbit/s 850 Nm Vertical Cavity Surface Emitting Laser Array

Current spreading structure of GaN-based vertical-cavity surface-emitting lasers

High-quality AlGaN Epitaxial Structures and Realization of UVC Vertical-Cavity Surface-Emitting Lasers