Abstract:Color-mixed (cm) light-emitting diodes (LEDs) are theoretically the most efficient white light emitters, projected to improve white light luminous efficacy by 34% compared to incumbent phosphor converted LEDs. Since white light technology is globally pervasive and essential, small improvements in LED technology can result in energy savings. However, cm-LEDs are not yet realized due to poor efficacy in green and amber emitting materials, a spectral region colloquially referred to as the green gap. ZnGeN2 is nearly isostructural and closely lattice-matched to GaN and can be heteroepitaxially integrated with existing GaN devices; ZnGeN2/GaN hybrid structures are theorized to emit green (∼530 nn) light with a spontaneous emission rate 4.6-4.9 times higher than traditional InGaN LEDs when incorporated into III-N LED structures. In this report we demonstrate the molecular beam epitaxy (MBE) growth of GaN and ZnGeN2 superlattices, an important step towards realizing multiple quantum well structures required for efficient LEDs. Elemental analysis, including atom probe tomography, shows that Ga and Ge are observed in both ZnGeN2 and GaN layers, degrading the structural uniformity. The lack of elemental abruptness also leads to increased defect luminescence and reabsorption of band edge luminescence. The source of unintentional Ga distributed throughout the ZnGeN2 layers was identified as excess flux escaping from around the closed MBE shutter. The source of unintentional Ge, which tended to incorporate as a single delta-doped layer in GaN, was identified as Ge riding along the cyclical metal-rich Ga adlayer used for high quality GaN, incorporating during subsequent nitrogen-rich growth step. Modifying the growth strategy results in improved structural quality, elemental abruptness, and luminescence response. This realization of structurally and elementally abrupt interfaces demonstrates the potential of heteroepitaxially integrated binary and ternary nitrides for energy-relevant devices.

Band-edge Emission Enhancement by Longitudinal Stress Field in GaN

The Effect of Lateral Growth of Self-Assembled GaN Microdisks on UV Lasing Action

Interband Transition Physics from the Absorption Edge in GaN: New Prospects from Numerical Analysis

Efficiency enhancement mechanism of piezoelectric effect in long-wavelength InGaN-based LED

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires

Unraveling the Origin of Mysterious Luminescence peak at 3.45 eV in GaN Nanowires

Large-scale Fabrication and Luminescence Properties of GaN Nanostructures by a Soft UV-curing Nanoimprint Lithography.

Material Design of Ultra-Thin InN/GaN Superlattices for a Long-Wavelength Light Emission

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

Stress and Dislocation Control of GaN Epitaxial Films Grown on Si Substrates and Their Application in High-Performance Light-Emitting Diodes

Luminescence associated with stacking faults in GaN

Microscopic origin of light emission in Al_yGa_{1-y}N/GaN superlattice: Band profile and active site

Bending strain effects on the optical and optoelectric properties of GaN nanowires

Nature and Elimination of Yellow-Band Luminescence and Donor–acceptor Emission of Undoped GaN

Dislocation Evolution in Anisotropic Deformation of GaN under Nanoindentation

Stress Management on Underlying GaN-based Epitaxial Films: A New Vision for Achieving High-Performance LEDs on Si Substrates

Dislocation luminescence in GaN single crystals under nanoindentation