Rectifying Property and Magnetocapacitance in Multiferroic P-N Junction

J. J. Yang,S. M. Guo,L. B. Luo,C. M. Xiong,Y. G. Zhao,Y. J. He

DOI: https://doi.org/10.1063/1.2883942

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Multiferroic p-n junctions were fabricated by growing La0.1Bi0.9MnO3 films on Nb–SrTiO3 using pulsed laser deposition. The current-voltage curves of the junction show good rectifying property. Both the ferroelectric transition and ferromagnetic transition of La0.1Bi0.9MnO3 have remarkable influence on the transport properties of the junction. A large positive magnetocapacitance was also observed in this junction. Analysis suggests that the property of La0.1Bi0.9MnO3∕Nb–SrTiO3 is dominated by the property of La0.1Bi0.9MnO3. This work demonstrates that multiferroic p-n junctions possess some interesting properties that may be useful for future applications.