Abstract:We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered In$_{x}$Ga$_{1-x}$As pyramidal quantum dots (QDs). Interdiffusion across the interfaces of an originally ``pure'' InAs dot buried in a GaAs matrix is simulated through a simple model, leading to atomic configurations where the abrupt hetero-interfaces are replaced by a spatially inhomogeneous composition profile $x$. Structural relaxation and the strain field calculations are performed through the Keating valence force field (VFF) model, while the electronic and optical properties are determined within the empirical tight-binding (ETB) approach. We analyze the relative impact of two different aspects of the chemical disorder, namely: (i) the effect of the strain relief inside the QD, and (ii) the purely chemical effect due to the group-III atomic species interdiffusion. We find that these effects may be quantitatively comparable, significantly affecting the electronic and optical properties of the dot. Our results are discussed in comparison with recent luminescence studies of intermixed QDs.

Influences of Flux and Interruption on Inas/Gaas Quantum Dot Superlattice Growth

Influence of Flux on the Growth of Inas Quantum Dots on Gaas Patterned Substrate

Effects Of Interruption On Surface Morphology For Inas/Gaas Quantum Dots' Growth

Kinetic Monte Carlo Simulations of Three-Dimensional Self-Assembled Quantum Dot Islands

Kinetic Monte Carlo Simulations for the Influence of Temperature on the Growth of InAs/GaAs Quantum Dots

Uniformity enhancement of the self-organized InAs quantum dots

Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition

Effects of growth interruption on self-assembled InAs/GaAs islands

Surface Morphology and Optical Properties of InGaN Quantum Dots with Varying Growth Interruption Time

Study of growth interruption of self-assembled InAs/GaAs islands

Monte Carlo Simulation of Quantum Dots 2D-3D Growth by MBE

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

X-ray Diffraction and Optical Characterization of Interdiffusion in Self-Assembled InAs/GaAs Quantum-Dot Superlattices

Effect of Growth Interruption on the Optical Properties of InAs/GaAs Quantum Dots

Interfacial characteristics dependence on interruption times in InGaAs/InAlAs superlattice grown by molecular beam epitaxy

Studying the Mechanism of Ordered Growth of InAs Quantum Dots on GaAs/InP

Quantum Dots: Growth of InAs Quantum Dots on GaAs (511)A Substrates: the Competition Between Thermal Dynamics and Kinetics (small 31/2016)

Methods to Tune the Electronic States of Self-Organized InAs/GaAs Quantum Dots

Exciton Transfer among Interface Islands in Growth-Interrupted Single Quantum Wells

Growth of InAs Quantum Dots on GaAs (511)A Substrates: the Competition Between Thermal Dynamics and Kinetics.

X-Ray Diffraction Analysis on Gallium-Indium Interdiffusion in Quantum Dot Superlattices