Abstract:Over the past few years tremendous progress has been made on the process, application, device physics and compact modeling of nanowire MOSFETs. We would like to review the above aspects of silicon-based nanowire, focusing on its crucial compact models and the circuit performance demonstration based on our group research work and understanding on nanowire MOSFET progress. Nanowire MOSFETs are recognized as one of the most promising candidates to extend Moore’s law into nanoelectronics era. Both the top-down (Singh et al., 2008) and bottom-up (Lu & Lieber, 2006) approaches are widely studied to prepare ultra small nanowire. With bottom-up method, nanowires are generally synthesized by using metal nanoclusters as catalysts via a vapor-liquid-solid process (Lu & Lieber, 2006). After growth nanowires are transferred to silicon substrate to form FET structure. With top-down technique there are various fabrication approaches, such as hard mask trimming, etching in H2 ambient and stress limited oxidation (Singh et al., 2008). 5-nm gate length device has been demonstrated (Liow et al., 2008). Nanowire MOSFETs prepared with both methods find application in logic circuits (Singh et al., 2008), memory (Singh et al., 2008) and sensors (Stern et al., 2008). Due to the quantum confinement in cross section of nanowire MOSFETs, especially of nanowires with diameter smaller than 15nm, electron mobility behaves differently from its bulk counterpart. Phonon-limited electron mobility decreases with reducing the wire size (Kotlyar et al., 2004) while total electron mobility is enhanced due to volume inversion at high transverse field (Jin et al., 2007). Although whether or not ballistic transport can occur in the silicon nanowire MOSFETs with ultrasmall channel length is disputable (Ferry et al., 2008), it deserves our attention. In the ballistic transport regime, carrier scattering in the device channel is totally suppressed. The study of ballistic transport in nanowire MOSFETs provides the upper limit to their performances. Under extreme scaling of nanowire MOSFETs, the atoms in nanowire cross section are countable. It is believed that the change in bandstructure of one dimensional nanowire influences the device performances (Neophytou et al., 2008). The above mentioned phenomenon are studied and simulated with various numerical approaches and also need to be accounted for in the advanced compact models.

An experimental study on carrier transport in silicon nanowire transistors: How close to the ballistic limit?

Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

Experimental Study on Quasi-Ballistic Transport in Silicon Nanowire Transistors and the Impact of Self-Heating Effects

Experimental Investigations on Channel Backscattering Characteristics of Gate-All-around Silicon Nanowire Transistors from Top-Down Approach

Investigation of Gate-All-around Silicon Nanowire Transistors for Ultimately Scaled CMOS Technology from Top-Down Approach

Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation

Fabrication and Transport Behavior Investigation of Gate-All-Around Silicon Nanowire Transistor from Top-Down Approach

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Comprehensive Mobility Study of Silicon Nanowire Transistors Using Multi-Subband Models

Hot Carrier Nanowire Transistors at the Ballistic Limit

Investigations on the Physical Limitation and Electrostatic Improvement of a Gate-All-around Silicon Nanowire Transistor with Schottky Barrier Source/drain

Ballistic Transport in Planar 2-D ZnXN2 (X = Si, Ge) Transistors With Ultrahigh On-State Current

Silicon-Based Nanowire Mosfets: From Process And Device Physics To Simulation And Modeling

A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation

Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate from Top-Down Approach: Simulation and Fabrication

Insight into Ballisticity of Room-Temperature Carrier Transport in Carbon Nanotube Field-Effect Transistors

Ballistic Transport and Quantum Interference in InSb Nanowire Devices

Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation

Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment