Abstract:We demonstrate experimentally non-equilibrium transport in unipolar quasi-1D hot electron devices reaching ballistic limit. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and subsequent filtering of hot and relaxed electrons with rectangular energy barriers. The number of electron passing the barrier depends exponentially on the transport length with a mean free path of 200 - 260 nm and reaches ballistic transport regime for the shortest devices with 70 % of the electrons flying freely through the base electrode and the barrier reflections limiting the transport to the collector.

What problem does this paper attempt to address?

This paper mainly explores the realization of non-equilibrium transport in nanowire transistors, especially when reaching the ballistic limit. The researchers manufactured defect-free 1D epitaxial growth of semiconductor nanowire heterostructures to flexibly adjust the bandgap. They demonstrated control of hot electron injection through a gradient conduction band profile and used a rectangular energy barrier to filter hot electrons and relax electrons. The experiment showed that the number of electrons passing through the barrier depends on the transport length, with 70% of electrons freely flying in a ballistic manner at room temperature in the shortest device. The traditional methods mentioned in the paper, such as gate electrodes, doping, or Schottky barriers, have limitations in the fabrication of hot electron devices, for example, doping acts as scattering centers affecting electron free flight. By using 1D epitaxial technology, strain-induced dislocations and doping issues can be avoided, resulting in better control of the bandgap and electron energy. In the experiment, the researchers grew InAs/InAsP nanowire heterostructures through chemical vapor deposition (CBE), forming a gradient barrier hot electron injector and a rectangular barrier as a detector. By adjusting the voltage, they were able to control electron injection and measure the number of ballistic electrons passing through the barrier. The experimental results were consistent with theoretical predictions, indicating the possibility of achieving ballistic electron transport in nanowires. By studying nanowire devices with different base lengths, they found that the transport characteristics depend on the base length, and the average free path of electrons is related to the diameter. These findings are important for understanding the behavior of hot electrons at the nanoscale and developing high-speed electronic devices.

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