Ballistic PbTe Nanowire Devices

Yuhao Wang,Fangting Chen,Wenyu Song,Zuhan Geng,Zehao Yu,Lining Yang,Yichun Gao,Ruidong Li,Shuai Yang,Wentao Miao,Wei Xu,Zhaoyu Wang,Zezhou Xia,Huading Song,Xiao Feng,Yunyi Zang,Lin Li,Runan Shang,Qi-Kun Xue,Ke He,Hao Zhang

DOI: https://doi.org/10.1021/acs.nanolett.3c03604

2023-09-12

Abstract:Disorder is the primary obstacle in current Majorana nanowire experiments. Reducing disorder or achieving ballistic transport is thus of paramount importance. In clean and ballistic nanowire devices, quantized conductance is expected with plateau quality serving as a benchmark for disorder assessment. Here, we introduce ballistic PbTe nanowire devices grown using the selective-area-growth (SAG) technique. Quantized conductance plateaus in units of $2e^2/h$ are observed at zero magnetic field. This observation represents an advancement in diminishing disorder within SAG nanowires, as none of the previously studied SAG nanowires (InSb or InAs) exhibit zero-field ballistic transport. Notably, the plateau values indicate that the ubiquitous valley degeneracy in PbTe is lifted in nanowire devices. This degeneracy lifting addresses an additional concern in the pursuit of Majorana realization. Moreover, these ballistic PbTe nanowires may enable the search for clean signatures of the spin-orbit helical gap in future devices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to reduce the disorder in nanowire devices in order to achieve ballistic transport. Specifically, by studying PbTe nanowire devices, the authors aim to overcome the main obstacle - disorder - encountered in current Majorana nanowire experiments. Disorder can seriously affect the electron transport in semiconductor nanowires, resulting in the transport process usually being diffusive rather than the ideal ballistic transport.

### Background and Importance of the Main Problem

1. **Effects of Disorder**:
- Due to the large surface - to - volume ratio of nanowires and the lack of an effective charge - screening mechanism, disorder has a significant impact on electron transport in nanowires.
- In previous studies, although researchers have made efforts to reduce the disorder in InAs and InSb nanowire devices, all existing Majorana nanowire experiments are still affected by disorder.

2. **Significance of Achieving Ballistic Transport**:
- Ballistic transport means that electrons are hardly affected by scattering during the transport process, which is an important indicator for evaluating device quality.
- Achieving ballistic transport is helpful for realizing Majorana zero modes in quantum devices, which is of great significance in fields such as topological quantum computing.

### Specific Contributions of the Paper

- **Introducing a New Material Platform**: The authors choose PbTe nanowires as the research object. This IV - VI group semiconductor material has a large dielectric constant and can effectively suppress charge disorder.
- **Achieving Ballistic Transport in Zero - Magnetic - Field**: The PbTe nanowires prepared by the Selective - Area - Growth (SAG) technique have observed a quantized conductance plateau in units of \(2e^2/h\) at zero magnetic field, indicating that ballistic transport has been achieved.
- **Revealing Valley Degeneracy Lifting**: The observed value of the quantized conductance plateau indicates that the valley degeneracy in PbTe nanowire devices has been lifted, which is an important progress in the pursuit of the realization of Majorana zero modes.
- **Potential for Future Applications**: These high - quality PbTe nanowire devices may provide a clean platform for further exploring the helical energy gap caused by spin - orbit interaction.

In conclusion, by achieving ballistic transport in PbTe nanowire devices, this paper significantly reduces disorder and provides new possibilities for future quantum device research, especially for the realization of Majorana zero modes.