Abstract:Revealing the regularities of interaction of accelerated ions with an irradiated material based on the Monte Carlo simulation contributes to the efficient application of focused ion beam technique in modern nanotechnologies. The correctness of the calculation results depends on the model chosen and the parameters determining the surface binding energy (SBE) of sputtered atoms. In this work, the SBE has been determined within the discrete–continuous model, which makes it possible to consider the formation of gallium precipitates during irradiation of a silicon substrate with gallium ions. To compare the simulation results with the experimental data on material sputtering by a focused ion beam, two types of rectangular boxes have been prepared. The structures of the first type were formed at the same dose, close to 5 × 10 17 cm –2 (corresponding to the steady-state sputtering regime), at accelerating voltages of 8, 16, and 30 kV. The structures of the second type were formed at an ion energy of 30 keV and doses of 2.5 × 10 16 , 5 × 10 16 , and 1 × 10 17 cm –2 . The box cross sections were investigated by transmission electron microscopy. The sputtering yield and depth distribution profiles of gallium atoms, calculated in the SDTrimSP 5.07 software package, were compared with the experimental data using the R factor. Two sets of values have been established for the variable parameters: the SBE of gallium atoms and the α 1 parameter of the discrete–continuous model. The first set describes the experimental data with acceptable accuracy for a small number of implanted gallium atoms, which is implemented for low ion doses, as well as for a beam energy of 8 keV and a dose of 5 × 10 17 cm –2 . The second set is optimal for describing the ion beam interaction with the substrate at ion energies of 16 and 30 keV under steady sputtering conditions.

Material Removal Efficiency in Ion Beam Figuring for Optical Component

Optical and Mechanical Properties and Microstructures of Nb2O5, Ta2O5 and SiO2 Thin Films Prepared by Ion Beam Sputtering

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Study on performance of Nb2O5 films with ion assisted deposition

Morphology evolution of fused silica surface during ion beam figuring of high-slope optical components

Investigation of Roughness Evolution of Ion Sputtered Fused Silica Surface.

An ion beam processing technology for complex component glass

Investigation of variable aperture on the performance and lifetime of ion thruster

Characteristics of an ion beam in the figuring process on an optical ultra-low expansion glass surface

Nonlinear Effects of Pulsed Ion Beam in Ultra-High Resolution Material Removal

Effect of ion beam etching on surface/subsurface structural defect evolution in fused silica optics

Adaptive Processing Strategy of Pulse Ion Beam for Sub-nanometer Precision Optical Components

Optical characterization and laser damage of fused silica optics after ion beam sputtering

Application of Flow Field Analysis in Ion Beam Figuring for Ultra-Smooth Machining of Monocrystalline Silicon Mirror

Experimental Investigation and Modeling of Friction Coefficient and Material Removal During Optical Glass Polishing

Simulation of Material Sputtering and Gallium Implantation during Focused Ion Beam Irradiation of a Silicon Substrate

Theoretical Modeling and Experimental Analysis of Single-Particle Erosion Mechanism of Optical Glass

Investigation of Material Removal Distributions and Surface Morphology Evolution in Non-Contact Ultrasonic Abrasive Machining (NUAM) of BK7 Optical Glasses

The Influence of Metal Surface Topography on Ablation Behavior During Intense Pulsed Ion Beam Irradiation

Process optimization for performance improvement in Mo/Si multilayers for EUV mask blanks

Surface Smoothing by Gas Cluster Ion Beam Using Decreasing Three-Step Energy Treatment