Abstract:High‐performance silicon heterojunction (SHJ) solar cells use carrier‐selective contact structures based on hydrogentated amorphous Si (a‐Si:H) to maximize collection of photogenerated carriers. The high open circuit voltages observed experimentally in SHJ cells require that the carrier‐selective contacts provide selectivity and passivation. However, a microscopic understanding of the dynamics of carrier transport through the a‐Si layer is currently lacking. In this paper, we explicitly simulate the transport of holes across the a‐Si:H(i) layer using a novel kinetic Monte Carlo approach. The hole‐selective contact structure investigated in this paper uses p‐type doped a‐Si:H(p) and intrinsic a‐Si:H(i) on an n‐type crystalline silicon wafer, where the selectivity is provided by the a‐Si:H(p) and the passivation is provided by the a‐Si:H(i). However, in addition to the passivation provided by the a‐Si:H(i), this layer also creates a potential barrier to the collection of photogenerated holes. There have been experimental studies in the literature that have suggested that multi‐phonon processes are the main transport mechanism that assists in the transport of holes across the intrinsic a‐Si:H barrier. Simulations presented here show that multi‐phonon injection of holes into the a‐Si:H(i) layer is the rate limiting step for transport across the a‐Si:H(i) layer. Our results indicate that multi‐phonon transport is strongly dependent on the electric field at the a‐Si:H(i)/c‐Si heterointerface as well. Transport simulations presented in this paper are consistent with experimental findings that multi‐phonon processes limit transport across the a‐Si:H(i) layer and are responsible for photocurrent suppression at the a‐Si:H(i)/c‐Si heterointerface when these processes are slower than the associated incident hole flux due to photo‐excitation. Using a novel kinetic Monte Carlo approach, we explicitly simulate transport of holes across the a‐Si:H(i) layer in a hole selective contact for a silicon heterojunction solar cell. Our results indicate that multi‐phonon transport is strongly dependent on the electric field at the a‐Si:H(i)/c‐Si heterointerface. Transport simulations presented in this paper are consistent with experimental findings that multi‐phonon processes limit transport across the a‐Si:H(i) layer and are responsible for photocurrent suppression at the a‐Si:H(i)/c‐Si heterointerface

Carrier Transport Mechanism in Thin Film Silicon/Crystalline Silicon Hetero-Junction Solar Cells

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Carrier Transport Simulation Methods for Electronic Devices with Coexistence of Quantum Transport and Diffusive Transport

Mechanism of Carrier Transport in Hybrid GaN/AlN/Si Solar Cells

Modeling of transport in carrier‐selective contacts in silicon heterojunction solar cells

Heavy Boron-Doped Silicon Tunneling Inter-layer Enables Efficient Silicon Heterojunction Solar Cells

The Bifunctional Tin-Doped Indium Oxide As Hole-Selective Contact and Collector in Silicon Heterojunction Solar Cell with A Stable Intermediate Oxide Layer

Simulation of a high-efficiency silicon-based heterojunction solar cell

Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

Continuous Distribution of Interface States in N-Type Double-Side Poly-Si/siox Passivating Contact Solar Cells

Carrier Conduction in Heterojunction of Hydrogenated Nanocrystalline Silicon with Crystal Silicon

Transport Mechanism of Nanocrystalline-Silicon Film Tunnelling Diodes

The Study of a New N/p Tunnel Recombination Junction and Its Application in A-Si:H/μc-si:h Tandem Solar Cells

Quantum Transport across Amorphous-Crystalline Interfaces in Tunnel Oxide Passivated Contact Solar Cells: Direct versus Defect-Assisted Tunneling

Transport of exciton and charge carrier (2). In solid solar cell of organic p-n heterojunction

Investigation of electronic transport mechanisms in Sb2Se3 thin-film solar cells

Numerical investigation of energy level strategy for TMO/Si tunneling heterojunction solar cells

Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells

Identification of embedded nanotwins at c-Si/a-Si:H interface limiting the performance of high-efficiency silicon heterojunction solar cells

The Carrier Transport Mechanism and Band Offset at the Interface of ZnO/n-Si(111) Heterojunction