Abstract:Understanding the properties of defects is crucial to design higher performance semiconductor materials because they influence the electronic and optical properties significantly. Using ab initio calculations, the dynamics properties of nitrogen interstitial in GaN material, including the configuration, migration, and interaction with vacancy were systematically investigated in the present work. By introducing different sites of foreign nitrogen atom, the most stable configuration of nitrogen interstitial was calculated to show a threefold symmetry in each layer and different charge states were characterized, respectively. In the researches of migration, two migration paths, in-plane and out-of-plane, were considered. With regards to the in-plane migration, an intermediated rotation process was observed first time. Due to this rotation behavior, two different barriers were demonstrated to reveal that the migration is an anisotropic behavior. Additionally, charged nitrogen Frenkel pair was found to be a relatively stable defect complex and its well separation distance was about 3.9 Å. Part of our results are in good agreement with the experimental results, and our work provides underlying insights of the identification and dynamics of nitrogen interstitial in GaN material. This study of defects in GaN material is useful to establish a more complete theory and improve the performance of GaN-based devices.

First principle study of nitrogen vacancy in aluminium nitride

First Principles Study of Aluminium Vacancy in Wurtzite Aluminium Nitride

First Principles Study of Vacancy-Solute Complexes in Vanadium

First-Principles Study on Native Defect Complexes in InN

First Principle Study of the Native Defects in Hexagonal Aluminum Nitride

Atomic geometry and electronic structure of defects in Zn3N2

First-principle study on the effect of point defects on the mechanical properties, thermal conductivity, and optical properties of wurtzite AlN

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory

Vibrational and vibronic structure of isolated point defects: The nitrogen-vacancy center in diamond

Electronic and Structural Properties of N-vacancy in AlN Nanowires:A First-Principles Study

Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials

Complex defects in Al0.5Ga0.5N by first principles calculations

Vacancy-type Defects in InxGa1–xN Alloys Probed Using a Monoenergetic Positron Beam

Study on Vacancy Znic Oxide with the First Principle Plane-wave Pseudopotential

Electron Localization and Emission Mechanism in Wurtzite (al, In, Ga)N Alloys

First-principles calculation of electronic structures and optical properties of wurtzite InxAl1−xN alloys

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations

Origin Of A Wide And Asymmetric Blue Luminescence Band In Ain Nanowires: V-N, V-Ai, O-N, And 30(N)-Va(I) Surface Defects

Calculation ofthe transitions and migration of nitrogen and vacancy related defects,with implications on the formation of NV centers in bulk diamond

Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping