Forward And Backward Diodelike Rectifying Properties Of The Heterojunctions Composed Of La1-Xsrxcoo3-Delta And 0.7 Wt % Nb-Doped Srtio3

Guang Li,TaoFei Zhou,Dan Hu,Yiping Yao,Yudong Hou,Xiaoguang Li

DOI: https://doi.org/10.1063/1.2790836

IF: 4

2007-01-01

Applied Physics Letters

Abstract:Heterojunctions composed of La1-xSrxCoO3-delta (x= 0.4 and 0.5) and 0.7 wt % Nb- doped SrTiO3 were fabricated and exhibited good rectifying properties. The asymmetric current- voltage relations for the x=0.4 and x=0.5 junctions display opposite shapes: the former has a forward shape, while the latter shows a backward one. The x=0.4 junction can be viewed as a Schottky diode. For the x=0.5 junction, the forward bias currents show much less temperature dependence than the reverse ones and the reverse voltage V-char, at which the bias current is 10 mu A, displays a distinct change at the ferromagnetic transition temperature of the cobalt oxide of the junction. These observations in the x=0.5 junction can be understood by a nearly degenerate model together with its temperature- dependent magnetism. (C) 2007 American Institute of Physics.