Dynamics Of Spin-Dependent Tunneling Through A Semiconductor Double-Barrier Structure

Jian Gong,Xixia Liang,ShiLiang Ban
DOI: https://doi.org/10.1063/1.2794378
IF: 2.877
2007-01-01
Journal of Applied Physics
Abstract:The dynamics of spin-dependent tunneling through a nonmagnetic semiconductor double-barrier structure is studied including the k(3) Dresselhaus spin orbit coupling is solved by the time-dependent Schrodinger equation with a developed method for the finite-difference relaxation. The resonant peak and quasibound level lifetime are determined by the in-plane wave vector and the applied electric field. The buildup time and decay lifetime of resonant probability amplitude are different for the spin-down and spin-up electrons due to the Dresselhaus spin-orbit coupling. Further investigation shows that the steady spin-polarization in both the well and collector regions has been obtained in the time domain. (C) 2007 American Institute of Physics.
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