Abstract:The effects of GaN/InGaN asymmetric lower waveguide(LWG)layers on photoelectrical properties of InGaN mul-tiple quantum well laser diodes(LDs)with an emission wavelength of around 416 nm are theoretically investigated by tuning the thickness and the indium content of InGaN insertion layer(InGaN-IL)between the GaN lower waveguide layer and the quantum wells,which is achieved with the Crosslight Device Simulation Software(PIC3D,Crosslight Software Inc.).The optimal thickness and the indium content of the InGaN-IL in lower waveguide layers are found to be 300 nm and 4％,respectively.The thickness of InGaN-IL predominantly affects the output power and the optical field distribution in comparison with the indium content,and the highest output power is achieved to be 1.25 times that of the reference structure(symmetric GaN waveguide),which is attributed to the reduced optical absorption loss as well as the concentrated optical field nearby quantum wells.Furthermore,when the thickness and indium content of InGaN-IL both reach a higher level,the performance of asymmetric quantum wells LDs will be weakened rapidly due to the obvious decrease of optical confinement factor(OCF)related to the concentrated optical field in the lower waveguide.

Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes

Differential Resistance of GaN-based Laser Diodes with and Without Polarization Effect

Polarization Of Edge Emission From Iii-Nitride Light Emitting Diodes Of Emission Wavelength From 395 To 455 Nm

Strain-Related Degradation of GaN-Based Blue Laser Diodes

Confinement Factor and Absorption Loss of AlInGaN Based Laser Diodes Emitting from Ultraviolet to Green

Asymmetrical Quantum Well Degradation of InGaN/GaN Blue Laser Diodes Characterized by Photoluminescence

Polarization effect's impact on luminous efficiency in InGaN/AlGaN MQWs LED

Temperature Dependence of Polarized Electroluminescence Side Emission from (0001)-Oriented Blue and Violet InGaN∕GaN Light-Emitting Diodes

Utilization of Polarization-Inverted Alingan or Relatively Thinner Algan Electron Blocking Layer in Ingan-Based Blue-Violet Laser Diodes

Investigation of InGaN/GaN Laser Degradation Based on Luminescence Properties

Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes

Opposite change trend of electrical behavior curves near the threshold between GaAs- and GaN-multi-quantum-well laser diodes

Short cavity InGaN-based laser diodes with cavity length below 300 μm

Valence Subband Coupling Effect on Polarization of Spontaneous Emissions from Al-rich AlGaN/AlN Quantum Wells

Influence Of Polarization-Induced Electric Field On The Wavelength And The Absorption Coefficient Of The Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells

Enhancing Performance of GaN-based LDs by Using GaN/InGaN Asymmetric Lower Waveguide Layers

Enhanced Temperature Characteristic of InGaN/GaN Laser Diodes with Uniform Multiple Quantum Wells

Gain-Guiding Anisotropic Polarized Amplified Spontaneous Emissions from C-Plane ZnO/ZnMgO Multiple Quantum Wells

Green Laser Diodes with Constant Temperature Growth of InGaN/GaN Multiple Quantum Well Active Region

Performance Enhancement of GaN-Based Laser Diodes with Prestrained Growth

Modal Gain Characteristics of a Two-Section InGaAs/GaAs Double Quantum Well Passively Mode-Locked Laser with Asymmetric Waveguide