Pixel Readout for GEM Detectors Based on Switched Field Effect Transistor Array

ZHENG Xiaocui,LI Yulan,LAI Yongfang,LI Jin,LI Yuanjing
DOI: https://doi.org/10.3321/j.issn:1000-0054.2007.06.025
2007-01-01
Abstract:A pixel readout for image formation was developed using gas electron multiplier(GEM) detectors.A switched array of pads and field effect transistors was constructed from single elements on a printed circuit board.Tests show that the dynamic range(ratio of maximum signal to full width at half maximum,FWHM,of noise) reaches 7.3×104,the integral nonlinearity is less than 0.324%,the sensitivity is 2.55 V/nC,and the system can work in real time at 30 frames/s.This readout is simple,flexible,and low cost,and can be implemented using thick-film technology and thin film transistor technology.
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