Nonlinearity of Integrated Electroabsorption Modulator Chip for RoF Link

Jianming Xu,Bing Xiong,Sun, Changzheng,Zhizhi Liu

DOI: https://doi.org/10.1109/inow.2007.4302901

2007-01-01

Abstract:The analog performance of a distributed feedback laser monolithically integrated with an electroabsorption modulator is investigated. The highest spurious free dynamic range of 105 dB-Hz2/3 has been demonstrated by optimizing the modulator bias.

What problem does this paper attempt to address?

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Ziliang Ruan,Kaixuan Chen,Zong Wang,Xuancong Fan,Ranfeng Gan,Lu Qi,Yiwei Xie,Changjian Guo,Zhonghua Yang,Naidi Cui,Liu Liu

DOI: https://doi.org/10.1002/lpor.202200327

2023-01-01

LASER & PHOTONICS REVIEWS

Abstract:Silicon nitride (SiN) emerges as an important platform for ultralow loss photonic integrations with complementary metal-oxide-semiconductor compatibility. However, active devices, such as modulators, are difficult to realize on pure SiN due to the lack of any electro-optic (EO) properties of the material. Here, an SiN and lithium niobate (LN) heterogenous integration platform supporting high-performance EO modulators on SiN waveguide circuits is introduced. An efficient evanescent coupling structure is realized for low-loss light transitions between the SiN waveguide and the LN ridge waveguide with a measured mode transition loss of only 0.4 dB. Based on this heterogeneous platform, an EO Mach-Zender interference modulator on SiN is built with unprecedented loss, efficiency, and bandwidth performances. A half-wave voltage of 4.3 V with a modulation bandwidth of 37 GHz and an overall insertion loss of 1 dB is measured for a 7-mm long device. Data transmission up to 128 Gb s(-1) with a bit-error-rate of <2.4 x 10(-4) is also demonstrated.
Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

Baoshuai Li,Weiqiang Wang,Honglei Yang,Hao Liu,Sai T. Chu,Brent Little,Yuxia Song,Boren Guan,Wenfu Zhang,Mingyu Li

DOI: https://doi.org/10.1364/ao.486492

IF: 1.9

2023-01-01

Applied Optics

Abstract:Integrated narrow-linewidth lasers are the key devices in compact coherent optical systems of metrology, sensing, and optical microwave generation. Here, we demonstrate a hybrid integrated laser based on an optical negative feedback scheme. The laser is composed of a commercial distributed feedback (DFB) laser diode and an on-chip micro-resonator with a Q-factor of 0.815 million. The feedback optical field is coupled back to the laser cavity through the back facet. Therefore, the laser can maintain the lasing efficiency of the DFB laser diode. The linewidth of the DFB laser diode is compressed from 2 MHz to 6 kHz, corresponding to the linewidth reduction factor of 25.2 dB. The theoretical result shows that the laser performance still has a huge improvement margin through precise control of the detuning between laser frequency and the micro-resonator, as well as the phase delay of the feedback optical field. The hybrid narrow-linewidth laser diode has wide application prospects in coherent optical systems benefitting from the low cost and volume productivity.
Experimental Study on the Modulation Nonlinearity of DFB Laser and DFB/EA Integrated Device

Jin Huang,Changzheng Sun,Zhizhi Liu,Bing Xiong,Yi Luo

DOI: https://doi.org/10.1109/inow.2007.4302934

2007-01-01

Abstract:Nonlinear modulation response of discrete or electroabsorption (EA) modulator integrated distributed feedback (DFB) lasers is experimentally studied. Reflection at modulator facet and modulation at relaxation resonance frequency are found to enhance high order modulation sidebands.
A Wideband Electro-Optic Modulator Based on Long Range Surface Plasmon Resonances

Xueliang Shi,Shilie Zheng,Hao Chi,Xiaofeng Jin,Xianmin Zhang

DOI: https://doi.org/10.1088/2040-8978/13/12/125001

IF: 2.1

2011-01-01

Journal of Optics

Abstract:A wideband electro-optic (EO) modulator based on long range surface plasmon resonances is proposed and numerically demonstrated. The modulator model consists of a prism-dielectric-metal-EO polymer-metal structure, using attenuated total internal reflection to excite long range surface plasmon resonances and a conductor-backed coplanar waveguide to distribute radiofrequency (RF) electrical signals. The parameters of the structure are optimized and the results show that the different frequency signals with voltages of 1.36 V at 6 GHz, 2.03 V at 20 GHz and 2.71 V at 60 GHz are enough to achieve a modulation index of 15.2%. The maximal modulation index can reach 76% ranging from DC to 60 GHz by increasing the input RF voltage, and the insertion loss can be decreased to 4.2 dB by adjusting the operating bias. High modulation efficiency, wide operating bandwidth and low insertion loss are realized simultaneously in this design.
InGaAsP Multiple-Quantum-Well Electroabsorption Modulator Integrated With V-Cavity Laser

lin wu,jianjun he,ming chen,danfeng fan

DOI: https://doi.org/10.1364/oedi.2014.oth4c.7

2014-01-01

Abstract:A monolithically integrated transmitter containing an InGaAsP electroabsorption modulator (EAM) and a V-cavity laser is proposed. The simulated E/O response shows a -3dB bandwidth over 16 GHz and the capacitance of EAM is reduced to 0.17 pF.
Q-modulated Semiconductor Laser Using Deep Etched Subwavelength Trenches

Jian-Jun He

DOI: https://doi.org/10.1109/metamat.2006.335057

2006-01-01

Abstract:Summary form only given, as follows. Novel structures and mechanisms for high-speed modulation of semiconductor lasers are proposed and analyzed. The modulator consists of an anti-resonant Fabry-Perot cavity constituted by deep etched subwavelength trenches, which acts as a rear reflector of the laser. The change of the absorption coefficient in the modulator results in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. An example structure and simulation results for a distributed feedback laser is presented. The monolithically integrated Q-modulated laser (QML) has advantages of high speed, high extinction ratio, low wavelength chirp and no insertion loss, and it does not require bandgap engineering of the quantum well material as in conventional electroabsorption modulated laser (EML).
Proposal for $Q$ -Modulated Semiconductor Laser

Jian-Jun He

DOI: https://doi.org/10.1109/lpt.2007.891242

IF: 2.6

2007-01-01

IEEE Photonics Technology Letters

Abstract:A novel structure and mechanism for high-speed modulation of semiconductor lasers are proposed and analyzed. The modulator consists of an antiresonant cavity acting as a rear reflector of the laser. The change of the absorption coefficient in the modulator results in a change in the reflectivity of the rear reflector, and consequently the Q-factor, the lasing threshold, and the output power. An implementation structure and numerical results for a Q-modulated distributed feedback laser are presented. The monolithically integrated Q-modulated laser has potential advantages of high speed, low wavelength chirp, high extinction ratio, and high power efficiency.
Electroabsorption Modulator Integrated Distributed Feedback Lasers for Trunk Line Fiber Communication

CZ Sun,GP Wen,B Xiong,Y Luo,TN Li,Y Nakano

DOI: https://doi.org/10.1117/12.408403

2000-01-01

Abstract:Electroabsorption modulator integrated distributed feedback lasers have been fabricated using identical epitaxial layer approach. The influence of wavelength detuning on device characteristics is investigated to achieve optimum device performance. Gain coupling is introduced into the device to improve single mode yield and wavelength stability. Integrated light source modules have also been fabricated for 2.5 Gb/s trunk line applications.
1.55 Mu M Ingaasp/Inp Partially Gain-Coupled Distributed Feedback Laser Electroabsorption Modulator Integrated Device For Trunk Line Communication

yi luo,guopeng wen,changzheng sun,tongning li,xinmin yang,renfan wang,cailin wang,jinyan jin

DOI: https://doi.org/10.1117/12.319593

1998-01-01

Abstract:In this paper, a 1.55 mu m InGaAsP/InP partially gain-coupled DFB laser monolithically integrated with electroabsorption modulator is fabricated for the first time. The threshold current and the extiction ratio are 40 mA and 11 dB respectively.
Electrical Nonlinearity in Silicon Modulators Based on Reversed PN Junctions

Sheng Yu,Tao Chu

DOI: https://doi.org/10.1364/prj.5.000124

IF: 7.6

2017-01-01

Photonics Research

Abstract:The electrical nonlinearity of silicon modulators based on reversed PN junctions was found to severely limit the linearity of the modulators.This effect,however,was inadvertently neglected in previous studies.Considering the electrical nonlinearity in simulation,a 32.2 dB degradation in the CDR3（i.e.,the suppression ratio between the fundamental signal and intermodulation distortion）of the modulator was observed at a modulation speed of 12 GHz,and the spurious free dynamic range was simultaneously degraded by 17.4 dB.It was also found that the linearity of the silicon modulator could be improved by reducing the series resistance of the PN junction.The frequency dependence of the linearity due to the electrical nonlinearity was also investigated.
&Lt;title>integrated ,module of a DFB Laser and LiNbO<formula><inf><roman>3</roman></inf></formula> Modulator</title>

Chengcheng Sun,Shizhong Xie,Fenghai Liu,Yong Xie,Weiming Mao,Baiqin Zhao,Heng Ge

DOI: https://doi.org/10.1117/12.253180

1996-01-01

Abstract:The linewidth broadening of Distributed Feedback (DFB) semiconductor lasers under direct modulation become more and more serious with the increase of modulating data rate. So it is important to investigate externally modulated transmitter module whose dynamic linewidth is the same as its static linewidth. The integrated module including DFB-LD and LN modulator reported here has a 3 dB-bandwidth of 3.8 GHz, 4 V drive voltage, and operating wavelength at 1548 nm, its linewidth is about 100 MHz measured by Gated Delay Self Homodyne and output power is 200 (mu) W. It has been used in optical transmission system and shows good characteristics.
Theoretical analysis of photon integrated circuit monolithically integrating distributed feedback semiconductor laser and electroabsorption modulator

Weimin Si,Yi Luo,Dejie Li,Keqian Zhang,Changzheng Sun

1995-01-01

Abstract:The characteristics of the laser and modulator such as the single-mode selectivity, modulation-induced wavelength shift and normalized output were analyzed. The characteristics of the devices with index-coupled, quarter-wave-shifted and gain-coupled distributed feedback laser sections were calculated. Considering the simplification of fabrication of gain-coupled distributed feedback laser without the formation of quarter-wave-shifted grating, the monolithically integrated gain-coupled distributed feedback laser together with the electroabsorption modulator is a very promising light transmitter for optical communication.
Integrated Module Of A Dfb Laser And Linbo3 Modulator

Chengcheng Sun,Shizhong Xie,Fenghai Liu,Yong Xie,Weiming Mao,Baiqin Zhao,Huang Ge

1996-01-01

Abstract:The linewidth broadening of Distributed Feedback (DFB) semiconductor lasers under direct modulation become more and more serious with the increase of modulating data rate. So it is important to investigate externally modulated transmitter module whose dynamic linewidth is the same as its static linewidth. The integrated module including DFB-LD and LN modulator reported here has a 3 dB-bandwidth of 3.8 GHz, 4 V drive voltage, and operating wavelength at 1548 nm, its linewidth is about 100 MHz measured by Gated Delay Self Homodyne and output power is 200 ��W. It has been used in optical transmission system and shows good characteristics.
Modulation Characteristics Enhancement of Monolithically Integrated Laser Diodes under Mutual Injection Locking

Changzheng Sun,Dong Liu,Bing Xiong,Yi Luo,Jian Wang,Zhibiao Hao,Yanjun Han,Lai Wang,Hongtao Li

DOI: https://doi.org/10.1109/jstqe.2015.2478817

IF: 4.9

2015-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:Modulation characteristics enhancement by mutual injection locking of monolithically integrated lasers is demonstrated. Resonance frequency as high as 34.3 GHz is recorded. The nonlinearity and chirp performances are simultaneously improved compared with free running state.
Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

Zhuo Cheng,Bigeng Chen,Chunlei Sun,Maoliang Wei,Shaoliang Yu,Lan Li,Hongtao Lin,Yunjiang Rao

DOI: https://doi.org/10.1109/acp55869.2022.10089079

2022-01-01

Abstract:A 5 th -order coupled microring electro-optical modulator with PIN structures is proposed and experimentally demonstrated on SOI integrated photonics platform. Ultra-high dynamic extinction ratio (ER) up to 60 dB is achieved benefiting from the high-order optical band-pass filter design. The device size on chip is only 400×220 μm 2 including electrodes and the driving voltage is 2.1 V corresponding to 0.23 W power consumption. Such integrated modulators would be promising in building compact and low-power distributed optical fiber sensing systems using low-background-noise optical pulses.
Novel Semiconductor Lasers and Integrated Photonic Devices

Jian-Jun He,Jialiang Jin,Dekun Liu,Lei Jin,Min Lou,Tingting Yu,Lei Wang

DOI: https://doi.org/10.1117/12.873899

2010-01-01

Abstract:Novel design concepts, simulations and experimental results on semiconductor lasers and integrated photonic devices are presented, for both telecom and biomedical applications. It is shown that the Vernier effect can be used to increase the tuning range of a digitally wavelength-switchable semiconductor laser, and to increase the sensitivity of passive and active waveguide sensors. The wavelength switchable laser based on V-coupled cavity has a large tolerance on the accuracy of the setting current. For the middle 50% of the current range corresponding to a wavelength channel, the wavelength varies by only ±0.01nm from the set value for 0.8nm channel spacing and the SMSR is maintained above 38dB. Wavelength switching over 8 consecutive channels is experimentally demonstrated using a single electrode control. The wavelength shift sensitivity of a waveguide sensor based on two cascaded microring resonators with Vernier effect can reach 1300nm/RIU, over an order of magnitude higher than a single ring sensor. A monolithic integrated intracavity biosensor based on V-coupled cavity laser is also proposed and analyzed. By simply detecting the power ratio of two output ports, a refractive index sensitivity in the order of 10-8 RIU can be achieved thanks to the intracavity sensing mechanism and the Vernier effect.
2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure

Y Luo,Gp Wen,Cz Sun,Tn Li,Xm Yang,Ys Wu,Rf Wang,Cl Wang,T Huang,Jy Jin

DOI: https://doi.org/10.1143/jjap.38.l524

IF: 1.5

1999-01-01

Japanese Journal of Applied Physics

Abstract:An electroabsorption (EA) modulator integrated with a partially gain-coupled distributed feedback (DFB) semiconductor laser is fabricated using a very simple device structure. An identical epitaxtial layer is used for the active layer of the laser and the waveguide of the modulator to achieve wavelength compatibility between the two components. The fabricated device shows a low threshold current of 27 mA, a large extinction ratio of over 17 dB at -3 V, and a fiber coupled power of 2.7 mW. Packaged modules are also fabricated for 2.5 Gb/s operation. The power penalty at a 10-10 bit-error rate is less than 0.5 dB after transmission through 240 km of traditional fiber. The influence of lasing wavelength detuning on device performance is also discussed based on our experimental data.
40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme

Yi Luo,Bing Xiong,Jian Wang,Pengfei Cai,Changzheng Sun

DOI: https://doi.org/10.1143/JJAP.45.L1071

2006-01-01

Abstract:An AlGaInAs multiple-quantum-well (MQW) distributed feedback (DFB) laser is monolithically integrated with a lumped-electrode electroabsorption (EA) modulator based on an identical epitaxial layer integration scheme. The device exhibits, a threshold current of 12 mA and an extinction ratio of higher than 13 dB under a 3 V reverse bias. By adopting a dry-etched high-mesa ridge waveguide and planar electrode structures, the capacitance of the modulator is reduced to about 0.11 pF and a 3 dBe modulation bandwidth of over 40 GHz has been demonstrated. To our knowledge, this is the first report on a 40 GHz operation of AlGaInAs integrated light sources.
Progress in High-Speed Electroabsorption Modulated Lasers

Sun Changzheng,Yang Shuhan,Xiong Bing,Wang Jian,Luo Yi

DOI: https://doi.org/10.3788/cjl202047.0701002

2020-01-01

Abstract:The continuous growth of data centers and 5G wideband wireless communication is driving toward an ever increasing demand for short-distance broadband fiber transmission, which has greatly promoted the development of high-speed optoclectronic devices. In short-distance applications, although directly modulated lasers have the advantages of low cost and low power consumption, the modulation bandwidth and transmission distance arc limited by the relaxation oscillation frequency and frequency chirp. On the other hand, an electroabsorption modulated laser (EML) exhibits wide modulation bandwidth and low frequency chirp, thus allowing transmission with higher bit-rate and over longer distance. In this paper, the integration schemes and device structure of EML integrated light source arc discussed. Recent progress in high-speed, high power, and low cost EML devices is summarized. Finally, a prospect for future development of EML is presented.
40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module with Novel Packaging Design

Changzheng Sun,Bing Xiong,Jianming Xu,He Yuan,Yi Luo

DOI: https://doi.org/10.1109/islc.2010.5642721

2010-01-01

Abstract:A 40 Gb/s AlGaInAs electroabsorption modulated laser (EML) module with optimized performance is reported. A novel modulation signal feeding line is adopted for module packaging, and dynamic extinction ratio over 8.2 dB is demonstrated at 43 Gb/s modulation.

Nonlinearity of Integrated Electroabsorption Modulator Chip for RoF Link

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

Experimental Study on the Modulation Nonlinearity of DFB Laser and DFB/EA Integrated Device

A Wideband Electro-Optic Modulator Based on Long Range Surface Plasmon Resonances

InGaAsP Multiple-Quantum-Well Electroabsorption Modulator Integrated With V-Cavity Laser

Q-modulated Semiconductor Laser Using Deep Etched Subwavelength Trenches

Proposal for $Q$ -Modulated Semiconductor Laser

Electroabsorption Modulator Integrated Distributed Feedback Lasers for Trunk Line Fiber Communication

1.55 Mu M Ingaasp/Inp Partially Gain-Coupled Distributed Feedback Laser Electroabsorption Modulator Integrated Device For Trunk Line Communication

Electrical Nonlinearity in Silicon Modulators Based on Reversed PN Junctions

&Lt;title&gt;integrated ,module of a DFB Laser and LiNbO&lt;formula&gt;&lt;inf&gt;&lt;roman&gt;3&lt;/roman&gt;&lt;/inf&gt;&lt;/formula&gt; Modulator&lt;/title&gt;

Theoretical analysis of photon integrated circuit monolithically integrating distributed feedback semiconductor laser and electroabsorption modulator

Integrated Module Of A Dfb Laser And Linbo3 Modulator

Modulation Characteristics Enhancement of Monolithically Integrated Laser Diodes under Mutual Injection Locking

Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

Novel Semiconductor Lasers and Integrated Photonic Devices

2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure

40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme

Progress in High-Speed Electroabsorption Modulated Lasers

40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module with Novel Packaging Design

&Lt;title>integrated ,module of a DFB Laser and LiNbO<formula><inf><roman>3</roman></inf></formula> Modulator</title>