Electrical and Optoelectrical Dual-Modulation in Perovskite-Based Vertical Field-Effect Transistors
Yuting Zou,Yaru Shi,Bin Wang,Mingxiu Liu,Junru An,Nan Zhang,Liujian Qi,Weili Yu,Dabing Li,Shaojuan Li
DOI: https://doi.org/10.1021/acsphotonics.2c01501
IF: 7
2022-12-06
ACS Photonics
Abstract:Organolead trihalide perovskites have drawn a great deal of interest for application in electronic and optoelectronic devices owing to their exceptional physical properties. However, the majority of reported perovskite field-effect transistors (FETs) demonstrates unsatisfactory performance, such as poor mobility, low on/off ratio, and low current density, which remains a significant obstacle for their potential applications. In this work, we report a vertical FET (VFET) composed of a single-crystalline MAPbBr3 perovskite Schottky junction, which effectively modulates the intrinsic carrier characteristics and enhances the performance of the device by reducing channel length and weakening the electrostatic screening effect. The device exhibits excellent performance with a high on/off ratio (104), high carrier mobility (23.4 cm2 V–1 s–1), and current density of 2.69 A cm–2 at room temperature. Importantly, the regulation of the drain voltage plays a similar role to that of the gate voltage in our device, which is attributed to the doping of perovskite with regulation of the source contact/perovskite Schottky junction. With the drain modulation, a superior photoresponse with enhanced responsivity of 16 A W1– and a low dark current are simultaneously obtained under light illumination, leading to a high detectivity of 1014 Jones. Our research may open up new possibilities for perovskite electronics, such as logic applications for various flexible, wearable, and disposable devices.
physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology