Abstract:The phenomenon of current–voltage hysteresis observed in perovskite-based optoelectronic devices is a critical issue that complicates the accurate assessment of device parameters, thereby impacting performance and applicability. Despite extensive research efforts aimed at deciphering the origins of hysteresis, its underlying causes remain a subject of considerable debate. By employing nanoscale investigations to elucidate the relationship between hysteresis and morphological characteristics, this study offers a detailed exploration of photocurrent–voltage hysteresis at the nanoscale within perovskite optoelectronic devices. Through the meticulous analysis of localized I – V curve arrays, our research identifies two principal hysteresis descriptors, uncovering a predominantly inverted hysteresis pattern in 87% of the locations examined. This pattern is primarily attributed to the energetic barrier encountered at the interface between the probe and the perovskite material. Our findings underscore the pronounced heterogeneity and grain-dependent variability inherent in hysteresis behavior, evidenced by an average Hysteresis Index value of 0.24. The investigation suggests that the localized hysteresis phenomena cannot be exclusively attributed to either photocharge collection processes or organic cation migration at grain boundaries. Instead, it appears significantly influenced by localized surface trap states, which play a pivotal role in modulating electron and hole current dynamics. By identifying the key factors contributing to hysteresis, such as localized surface trap states and their influence on electron and hole current dynamics, our findings pave the way for targeted strategies to mitigate these effects. This includes the development of novel materials and device architectures designed to minimize energy barriers and enhance charge carrier mobility, thereby improving device performance and longevity. This breakthrough in understanding the microscale mechanisms of hysteresis underscores the critical importance of surface/interface defect trap passivation in mitigating hysteretic effects, offering new pathways for enhancing the performance of perovskite solar cells.

Hystersis Mechanism in Perovskite Photovoltaic Devices and Its Potential Application for Multi-Bit Memory Devices

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Unveiling heterogeneity of hysteresis in perovskite thin films

Photomodulated Hysteresis Behaviors in Perovskite Phototransistors with Ultra-Low Operating Voltage

New Insights into the Origin of Hysteresis Behavior in Perovskite Solar Cells

Insights of Hysteresis Behaviors in Perovskite Solar Cells from a Mixed Drift-Diffusion Model Coupled with Recombination

A Study of Hysteresis in Perovskite Solar Cell

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Memory Devices via Unipolar Resistive Switching in Symmetric Organic-Inorganic Perovskite Nanoscale Heterolayers

Universal Approach toward Hysteresis-Free Perovskite Solar Cell via Defect Engineering

Targeted suppression of hysteresis effect in perovskite solar cells through the inhibition of cation migration

Memristive Property’s Effects on the I–V Characteristics of Perovskite Solar Cells

Quasi‐2D Perovskite with Ligand Engineering to Improve the Stability of Phototransistor Memory with a Floating Gate

Modulating Hysteresis of Perovskite Solar Cells by a Poling Voltage

Triple-Cation Perovskite Resistive Switching Memory with Enhanced Endurance and Retention

Interfacial Oxygen Vacancies as a Potential Cause of Hysteresis in Perovskite Solar Cells

The Influence of Different Recombination Pathways on Hysteresis in Perovskite Solar Cells with Ion Migration

Role of Ionic Functional Groups on Ion Transport at Perovskite Interfaces

On the Origin of Hysteresis in Perovskite Solar Cells

Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron‐Style Models

Polyethylene-Glycol-Modified Halide Perovskite for Enhancing the Switching Ratio and Cycling Stability of Resistive Random Access Memory