Abstract:Photomemristors have been regarded as one of the most promising candidates for next-generation hardware-based neuromorphic computing due to their potentials of fast data transmission and low power consumption. However, intriguingly, so far, photomemristors seldom display truly nonvolatile memory characteristics with high light sensitivity. Herein, we demonstrate ultrasensitive photomemristors utilizing two-dimensional (2D) Ruddlesden-Popper (RP) perovskites with a highly polar donor-acceptor-type push-pull organic cation, 4-(5-(2-aminoethyl)thiophen-2-yl)benzonitrile+ (EATPCN+), as charge-trapping layers. High linearity and almost zero-decay retention are observed in (EATPCN)2PbI4 devices, which are very distinct from that of the traditional 2D RP perovskite devices consisting of nonpolar organic cations, such as phenethylamine+ (PEA+) and octylamine+ (OA+), and traditional 3D perovskite devices consisting of methylamine+ (MA+). The 2-fold advantages, including desirable spatial crystal arrangement and engineered energetic band alignment, clarify the mechanism of superior performance in (EATPCN)2PbI4 devices. The optimized (EATPCN)2PbI4 photomemristor also shows a memory window of 87.9 V and an on/off ratio of 106 with a retention time of at least 2.4 × 105 s and remains unchanged after >105 writing-reading-erasing-reading endurance cycles. Very low energy consumptions of 1.12 and 6 fJ for both light stimulation and the reading process of each status update are also demonstrated. The extremely low power consumption and high photoresponsivity were simultaneously achieved. The high photosensitivity surpasses that of a state-of-the-art commercial pulse energy meter by several orders of magnitude. With their outstanding linearity and retention, rabbit images have been rebuilt by (EATPCN)2PbI4 photomemristors, which truthfully render the image without fading over time. Finally, by utilizing the powerful ∼8 bits of nonvolatile potentiation and depression levels of (EATPCN)2PbI4 photomemristors, the accuracies of the recognition tasks of CIFAR-10 image classification and MNIST handwritten digit classification have reached 89% and 94.8%, respectively. This study represents the first report of utilizing a functional donor-acceptor type of organic cation in 2D RP perovskites for high-performance photomemristors with characteristics that are not found in current halide perovskites.

Quasi‐2D Perovskite with Ligand Engineering to Improve the Stability of Phototransistor Memory with a Floating Gate

Photoinduced Nonvolatile Memory Transistor Based on Lead‐Free Perovskite Incorporating Fused Π‐Conjugated Organic Ligands

Comprehensive Non-volatile Photo-programming Transistor Memory via a Dual-Functional Perovskite-Based Floating Gate

Performance Enhancement of Lead‐Free 2D Tin Halide Perovskite Transistors by Surface Passivation and Its Impact on Non‐Volatile Photomemory Characteristics

Light-Enhanced Ion Migration in Two-Dimensional Perovskite Single Crystals Revealed in Carbon Nanotubes/Two-Dimensional Perovskite Heterostructure and Its Photomemory Application

Harnessing 2D Ruddlesden-Popper Perovskite with Polar Organic Cation for Ultrasensitive Multibit Nonvolatile Transistor-Type Photomemristors

Enhancing Resistive Switching Performance and Ambient Stability of Hybrid Perovskite Single Crystals via Embedding Colloidal Quantum Dots

A Solution‐Processed All‐Perovskite Memory with Dual‐Band Light Response and Tri‐Mode Operation

Volatility Transition from Short‐Term to Long‐Term Photonic Transistor Memory by Using Smectic Liquid Crystalline Molecules as a Floating Gate

Liquid Crystalline Rylenediimides with Highly Order Smectic Layer Structure as a Floating Gate for Multiband Photoresponding Photonic Transistor Memory

Interfacial Modification And Memory Effect In Pentacene-Based Phototransistors

Visible-light irradiation improved resistive switching characteristics of a 2D Cs2Pb(SCN)2I2-Based memristor device

All-inorganic perovskite quantum dot light-emitting memories

Carbonized polymer dots enhanced stability and flexibility of quasi-2D perovskite photodetector

Multilevel Photonic Transistor Memory Devices Based on 1D Electrospun Semiconducting Polymer /Perovskite Composite Nanofibers

Multi‐level Nonvolatile Transistor Memory With Optical Rewritability Utilizing Reverse‐Bias P‐N Junction of Oriented Rod‐Like Organic Molecules

Unraveling the Singlet Fission Effects on Charge Modulations of Organic Phototransistor Memory Devices

CsPbBr3 Perovskite Quantum Dots Embedded in Polystyrene-poly2-vinyl Pyridine Copolymer for Robust and Light-Tunable Memristors

Realizing fast photoinduced recovery with polyfluorene‐ block ‐poly (vinylphenyl oxadiazole) block copolymers as electret in photonic transistor memory devices

Fast Photoresponsive Phototransistor Memory Using Star-Shaped Conjugated Rod–Coil Molecules as a Floating Gate

Memory Devices via Unipolar Resistive Switching in Symmetric Organic-Inorganic Perovskite Nanoscale Heterolayers