Abstract:Internet-of-Things (IoT) applications require nW-power current references that are robust to process, voltage and temperature (PVT) variations, to maintain the performance of IoT sensor nodes in a wide range of operating conditions. However, nA-range current references are rarely area-efficient due to the use of large gate-leakage transistors or resistors, which occupy a significant silicon area at this current level. In this paper, we introduce a nA-range constant-with-temperature (CWT) current reference, relying on a self-cascode MOSFET (SCM) biased by a four-transistor ultra-low-power voltage reference through a single-transistor buffer. The proposed reference includes a temperature coefficient (TC) calibration mechanism to maintain performance across process corners. In addition, as the proposed design relies on the body effect, it has been fabricated and measured in 0.11-$\mu$m bulk and 22-nm fully-depleted silicon-on-insulator (FD-SOI) to demonstrate feasibility in both technology types. On the one hand, the 0.11-$\mu$m design consumes a power of 16.8 nW at 1.2 V and achieves a 2.3-nA current with a line sensitivity (LS) of 2.23 %/V at 25°C and a TC of 176 ppm/°C at 1.2 V from -40 to 85°C. On the other hand, the 22-nm design consumes a power of 16.3 nW at 1.5 V and achieves a 2.5-nA current with a 1.53-%/V LS at 25°C and an 82-ppm/°C TC at 1.5 V from -40 to 85°C. Thanks to their simple architecture, the proposed references achieve a silicon area of 0.0106 mm$^2$ in 0.11 $\mu$m and 0.0026 mm$^2$ in 22 nm without compromising other figures of merit, and are thus competitive with state-of-the-art CWT references operating in the same current range.

A Current Source in ROIC with Working Temperature of 77 K

A Programmable Robust Current Reference In Roic With Low Working Temperature

A Temperature Independent Current Reference in Roic

A 0.8V Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.4°C ($\mathbf{3}\mathbf{\sigma}$) from −40°C to 125°C in 22nm CMOS

A Sub-1-V Nanopower MOS-Only Voltage Reference

Design and Implementation of Reference Current Source Based on Deep Submicron Technology

A 2.5-nA Area-Efficient Temperature-Independent 176-/82-ppm/°C CMOS-Only Current Reference in 0.11-$μ$m Bulk and 22-nm FD-SOI

A 30na Temperature-Independent CMOS Current Reference and Its Application in an LDO

A 1770- $\mu$ M 2 Leakage-Based Digital Temperature Sensor with Supply Sensitivity Suppression in 55-Nm CMOS

A 0.7‐V 7.4‐nW 6.4‐ppm/°C CMOS Subthreshold Voltage Reference With Temperature Compensation Circuit

A 0.08%/V 32.3-Ppm/ $^{\circ}$ C 36.6-Khz Unregulated Current-Reuse Ring Oscillator with $v_{\mathrm{gs}}$ -Ratio-based Compensation Using One-Type-Only Resistor

A Low Power Low Supply Sensitivity Current-Mode Relaxation Oscillator

A 1.58nJ/conversion temperature-to-digital converter with low power variations

A 1.1- / 0.9-nA Temperature-Independent 213- / 565-ppm/$^\circ$C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI

A Low Power and High Speed CMOS Comparator at Croyogenic Temperature

A Novel CMOS Temperature Sensor with High Accuracy Wide Supply Voltage Range

Low-Temperature-Drift High PSRR CMOS Current Reference

Compact Superconducting Terahertz Source Operating in Liquid Nitrogen

CMOS Buffer Amplifier Working at 77 K

A 20 nW+0.8 C/-0.8 C Inaccuracy (3) Leakage-Based CMOS Temperature Sensor With Supply Sensitivity of 0.9 C/V

A Novel Low Power Wide Supply Voltage Range Cmos Temperature Sensor With-0.2/0.5 Degrees C Error From-20 Degrees C To 60 Degrees C