Abstract:Growth mechanisms of (0001) wurtzite GaN films at low temperature are investigated by molecular dynamics simulations and experiments. The crystallization properties of GaN films deteriorate dramatically at low temperature due to the limited energy available for atomic surface migration and incorporation into the perfect lattice sites. In our simulation, growth interruption stage is periodically introduced and the as-deposited GaN films are treated with energy-carrying argon ions at this stage. The surface atoms located at the weak binding sites can acquire energy from the argon ions for secondary migration and incorporation into the perfect lattice sites. As a result, the crystallization properties of GaN films are significantly improved. GaN films are experimentally grown on sputtered AlN/sapphire substrates at 600°C via inductively coupled plasma metal organic chemical vapor deposition along with periodic argon plasma treatment. The as-deposited film acquires energy from the plasma, leading to significant improvement of the crystalline properties. The surface morphology of the GaN film demonstrates a noticeable smoothing effect, with an evident increase in grain size from submicron to micron level. Additionally, GaN film with the optimized surface morphology exhibits high c-axis and in-plane orientations, and the full width half maximums of (002) and (102) x-ray diffraction rocking curves are 0.25° and 0.32°, respectively. These results provide effective guidance for the growth of GaN films at low temperature.

Improvement of Surface Morphology of RF MBE Grown(0001)GaN via In-Protected Growth Interruption Modulation

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

Improving Optical and Electrical Characteristics of GaN Films via 3D Island to 2D Growth Mode Transition Using Molecular Beam Epitaxy

Effect of the Growth Interruption on the Surface Morphology and Crystalline Quality of MOCVD-Grown H-Bn

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer

GaN growth on Si and Si-SiO2-Si compliant substrates

An InGaN/GaN single quantum well improved by surface modification of GaN films

Growth Condition Optimization And Mobility Enhancement Through Prolonging The Gan Nuclei Coalescence Process Of Algan/Aln/Gan Structure

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

Growth of High Quality GaN Thin Films by MBE on Intermediate-temperature Buffer Layers

Surface Morphology and Composition Studies in InGaN/GaN Film Grown by MOCVD

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching