Monte Carlo simulation of low energy He+, Ar+, Xe+ bombardment in SiC

JIN Shi-sheng,ZHU Lin-shan,GOU Fu-jun,XIE Quan
DOI: https://doi.org/10.3321/j.issn:1001-9731.2007.10.008
2007-01-01
Abstract:In this paper,the monte-carlo(MC) code SRIM have been used to simulate the sputter yield,distribution of sputter atoms,energy of sputter atom of SiC for bombardment by He+,Ar+,Xe+at differnect energy(100-500eV) and different angle(0-85°).The calculation results show that sputter mechanism for light ion like He+ is mainly caused by cascades collisions from backscatter ion under surface of SiC,and the heavy ion like Ar+,Xe+ is caused by cascades collisions from backscatter atom in SiC.The sputter yield of SiC enhance and reach to the max value following the incidence angle of ion gradually increasing from 0 to about 70°.When the incidence angle exceed 70° will cause the degree of the cascades collisions become too small and lead to the sputter yield decrease intensively
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