Abstract:Nowadays, the microelectronics industry broadly uses the flipchip technology to enhance the packaging density. However, the small size and the unique geometry of the flip-chip solder joints induce the electromigration (EM) reliability issue. In this study, a Pb-free solder joints (SAC1205) was EM tested by a current of 7.5×10 3 A/cm 2 . During the tests, a three-dimensional (3D) X-ray laminography method was applied to in-situ observe the microstructure evolution. The laminography method allows for the non-destructive observation and provides the quantitative analysis among three dimensions. After EM testing for 650 hr, a new EM failure mechanism was found rather than the well-known models, the pancake void propagation and the under-bump-metallization dissolution. According to the laminography images at different testing stages, many voids simultaneously formed and grew during the entire procedure of testing. Most of them distributed in the current crowding region, but a few also located in the low-current-density region. As the testing time increased, voids grew bigger, coalesced with each other, and finally became large voids which occupied the interface and caused EM failure. The finite-element (FE) method was also applied to analyze the interplay between the microstructure evolution and current density redistribution. A series of 3D FE models were built based on the laminography images at different testing stages. The current density distribution from the FE analysis indicates that the multiple voids formation does not affect the global current density distribution until the voids merged together and became very large voids in the late stage of EM testing. The relieving of the global current crowding in the pancake void model was not found in this new EM failure mechanism. It was the local current crowding found in the new model that responsible for the EM retardation.

Electromigration Time to Failure Simulation for Solder Bumps of a Chip Scale Package

A new prediction methodology for electromigration-induced solder degradation in a WL-CSP system

MODELING OF ELECTROMIGRATION FAILURE PREDICTING FOR FCBGA SOLDER BUMP UNDER MULTI-PHYSICAL FIELD LOADS

Prediction of Electromigration Failure of Solder Joints and Its Sensitivity Analysis

Design of experiments of electromigration reliability for solder joints of a wafer level chip scale package

Impact of the UBM geometry and solder bump shape on electromigration reliability in a package system

Electromigration of 300 μm diameter Sn-3.0Ag-0.5Cu lead-free bumps in flip chip package

The Study of the Reliability of Complex Components during the Electromigration Process

Effect of Solder Bump Size on Electro-Migration Failure in Flip Chip Package

Electromigration Mechanism of Failure in Flip-Chip Solder Joints Based on Discrete Void Formation

Investigation on electromigration failure behavior of SAC305/SnPb micro-hybrid solder joints for package-on-package techniques: Experiment and simulation

Reliability Study of Fine Pitch Cu-Sn Micro-Bump Structure Electromigration Test by Finite Element Simulation

Study of Electromigration-Induced Formation of Discrete Voids in Flip-Chip Solder Joints by In-Situ 3D Laminography Observation and Finite-Element Modeling

Stress Relaxation and Failure Behavior of Sn–3.0Ag–0.5Cu Flip-Chip Solder Bumps Undergoing Electromigration

Electromigration reliability evaluation in FCBGA package based on orthogonal experimental design

Electromigration Failure Of Snagcu Lead-Free Bga Package Assembled With Snpb Solder Paste

Electromigration Study of Micro Bumps at Si/Si Interface in 3DIC Package for 28nm Technology and Beyond

Thermomechanical Stress and Strain in Solder Joints During Electromigration

Study of discrete voids formation in flip-chip solder joints due to electromigration using in-situ 3 D laminography and

Modeling of electromigration of the through silicon via interconnects

Coupled Phase Field And Finite Element Modeling Of Void Evolution And Physical Property Change Of Micro Flip-Chip Solder Joints Under Electromigration And Elastic Stress Field