Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping
Aaryan Oberoi,Ying Han,Sergei P. Stepanoff,Andrew Pannone,Yongwen Sun,Yu-Chuan Lin,Chen Chen,Jeffrey R. Shallenberger,Da Zhou,Mauricio Terrones,Joan M. Redwing,Joshua A. Robinson,Douglas E. Wolfe,Yang Yang,Saptarshi Das
DOI: https://doi.org/10.1021/acsnano.3c03060
IF: 17.1
2023-10-11
ACS Nano
Abstract:n-type field effect transistors (FETs) based on two-dimensional (2D) transition-metal dichalcogenides (TMDs) such as MoS(2) and WS(2) have come close to meeting the requirements set forth in the International Roadmap for Devices and Systems (IRDS). However, p-type 2D FETs are dramatically lagging behind in meeting performance standards. Here, we adopt a three-pronged approach that includes contact engineering, channel length (L(ch)) scaling, and monolayer doping to achieve high performance...
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology