Development of Si Multi-Strip Bi-Dimension Position Sensitive Detectors

TAN Ji-lian,JIN Gen-ming,DUAN Li-min,LU Zi-wei,YUAN Xiao-hua,ZHANG Ling,XIAO Guo-qing,XU Hu-shan,TIAN Da-yu,NING Bao-jun,WANG Wei,ZHANG Lu
DOI: https://doi.org/10.3969/j.issn.0258-0934.2006.06.001
2006-01-01
Abstract:The technology and preliminary test results of Si bi-dimension position sensitive detector based on multi-strip structure fabricated by using planar technology were described in this paper.The sensitive area of this kind of detector is 50×50 mm~(2).The P side surface was divided into equal 16 strips with 100μm space between neighbouring two strips,each strip having length of 50 mm and width of 3 mm.The strips doped on P surface are resistive P junction layer featuring high uniformity,The incident positions of particles can be determined by using charge-division method.When the detector was biased with full deplation voltage,the reverse leakagecurrents of most of strips were ess than 30 nA,and an energy resolution of 2.5% and a position resolution of 0.5 mm were obtained for ~(239) Pu α particles.
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