Electrical Transport Through Individual Nanowires with Transverse Grain Boundaries

X. Y. Xue,P. Feng,C. Wang,Y. J. Chen,Y. G. Wang,T. H. Wang
DOI: https://doi.org/10.1063/1.2221408
IF: 4
2006-01-01
Applied Physics Letters
Abstract:V 2 O 4 ∙ 0.25 H 2 O nanowires are synthesized via hydrothermal route. The nanowires are of metastable phase, and transverse grain boundaries are observed in their microstructures. Transport through individual V2O4∙0.25H2O nanowires shows nonlinear current-voltage (I-V) characteristics in the bias range of −3to3V. The resistance rapidly decreases from 2.54to0.5MΩ as the bias is raised from 0to1V. Such behaviors can be attributed to the presence of the barrier at the transverse grain boundary. By analyzing the I-V curves at various temperatures, the effective barrier height is estimated to be about 0.13eV. Our results provide important information about how the microstructure mismatch affects the electrical properties.
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