Abstract:The energy barrier formed at the interface between a 2D material and a bulk metal is a critical factor for determining the performance of nanoelectronic devices. While the Schottky–Mott rule is a commonly used guide to target suitable metal contacts, it fails to predict the correct band alignment at a metal/2D material interface due to the presence of surface states or a strong coupling between the 2D material and metal. We used X-ray photoemission spectroscopy, a surface-sensitive technique, to monitor the potential energy distribution at the interface between indium and indium selenide (the In/InSe interface). The shifts of the core-level peak after deposition of In were used to determine the valence band offset. In addition, temperature-dependent transport measurements were used to determine the energy barrier. Arrhenius analyses of the gate-dependent drain current confirmed the energy barrier formed at the In/InSe interface to be of ∼0.04 eV. This barrier height confirmed the good quality of the In contact to InSe. Moreover, the temperature dependence of transfer curves showed that the conductivity of InSe can be tuned from metallic to insulating by conventional SiO2 dielectric gate tuning. These findings not only provided a simple way for utilizing InSe in the applications of high-performance nanoelectronics (e.g., photosensors, high-mobility transistors, and memory devices) but also demonstrated that an InSe field-effect transistor with a SiO2 gate dielectric serves as a good platform for the study of metal to insulator transition mechanisms. The ability to tune the phase of InSe may find applications in superconductors, data storage devices, and photodetectors.

MS-XANES studies on the interface effect of semiconductor InSb nanoparticles embedded in α-SiO2 matrix

MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in A-Sio2 Matrix

Interface Effect Of Insb Quantum Dots Embedded In Sio2 Matrix

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Understanding the role of interface in advanced semiconductor nanostructure and its interplay with wave function overlap

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Si/Ge interfacial thermal conductance enhancement through Sn nanoparticle embedding

A surface and interface study on the InSb/GaAs heterostructures

Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling

Interfacial charge transfer and Schottky barriers at c-Si/a-In heterojunctions

Structural And Optical Characterization Of Nanocrystals Of The Inas-Inp System Embedded In Amorphous Sio2 Thin Films

Interface dipole enhancement effect and enhanced Rayleigh scattering

In-Situ Xafs Studies On Local Structures Of Molten Insb Compounds

Interface Broadening And Raman Scattering In Si1-Xgex/Si Superlattices

X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions

Synchrotron radiation studies on metal/semiconductor interface electronic structures

Electrostatic effect of Au nanoparticles on near-infrared photoluminescence from Si/SiGe due to nanoscale metal/semiconductor contact.

Interface structure and photoelectric properties of heterojunction thin films materials

Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

Interface Design And Properties In Inas/Gasb Type-Ii Superlattices Grown By Molecular Beam Epitaxy

The Influence of Electronic Transport Across Interface Junction Between Si Substrate and the Root of ZnO Micro-Prism on Field Emission Performance