Abstract:Arrays of randomly oriented zinc oxide (ZnO) nanowires were fabricated on silicon wafers via a simple thermal evaporation method. During the fabrication, the temperature around the substrate was below 500°C. The products were analyzed by conventional means and determined to be single crystals of wurtzite-type ZnO that grew along the c-axis. These nanowires were 10–100nm in diameter and 10–100μm in length, suggesting a possible high field enhancement factor. The dependence of the field emission current on the anode–cathode voltage (I–V behavior) of the ZnO nanowire arrays was measured in a lab-built ultrahigh vacuum system with a base pressure of 10−7Pa. After surface cleaning by heat treatment, two characteristic electric fields, under which 10μA/cm2 and 1mA/cm2 current densities were extracted, were measured to be 4.0 and 4.7V/μm, respectively. As observed with a transparent anode, emission occurred uniformly over the whole sample surface. A 72h-long test on emission stability was performed under a constant voltage of 2.75kV. The current dropped occasionally to approximately 80% of the initial value during the test owing to the poor adherence of the nanowires to the substrate. These preliminary results have shown the perspective of, as well as a major drawback to, a ZnO nanowire array being developed into a cold electron source to be used in future electronic devices.

Extremely Stable Field Emission from AlZnO Nanowire Arrays

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Field Emission from Nonaligned Zinc Oxide Nanowires

Field Emission from a Non-Aligned ZnO Nanowire Array

Efficient field emission from ZnO nanoneedle arrays

Stable Field Emission from Hydrothermally Grown ZnO Nanotubes

Stable and Uniform Field Emission from Zinc Oxide Nanowires Grown on Carbon Nanotube Mesh Template

Field Emission Properties of Zinc Oxide Nanowires Fabricated by Thermal Evaporation

Field Emission from in Situ -Grown Vertically Aligned SnO 2 Nanowire Arrays

Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays.

Field Emission from Well-Aligned Zinc Oxide Nanowires Grown at Low Temperature

Stable Field Emission from Tetrapod-Like ZnO Nanostructures

ZnO Nanowire Field Emitter Arrays: Fabrication, Field Emission Mechanism and Applications

Field Emission from Zinc Oxide Nanostructures and Its Degradation

Field Emission Properties of ZnO Nanowire Array Directly Grown from Zinc Substrate

Fabrication of Large-Area ZnO Nanowire Field Emitter Arrays by Thermal Oxidation for High-Current Application

Stable Field Emission Lamps Based on Well-Aligned BaO Nanowires

Enhanced Field Emission from ZnO Nanowire Arrays Utilizing MgO Buffer Between Seed Layer and Silicon Substrate

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

Vertically Aligned ZnO Nanowires Produced by a Catalyst-Free Thermal Evaporation Method and Their Field Emission Properties

Field Emission from Zinc Oxide Nanowire Arrays Grown Directly from Brass