Influence Of Niobium Dopant On The Photoelectrochemical Performance And Photochargeability Of Srtio3 Films

G. T. Wang,J. P. Tu,J. B. Wu,S. F. Wang,Y. Li,W. K. Zhang,H. Huang
DOI: https://doi.org/10.1109/NEMS.2006.334907
2006-01-01
Abstract:SrTi1-xNbxO3 films with thickness of about 200 nm on nickel substrate were deposited by magnetron sputtering method. After annealed at 500 degrees C, a hydrogen storage alloy was deposited on the back of the nickel substrate and the SrTi1-xNbxO3/Ni/hydrogen storage alloy (SNH) electrodes were fabricated. The influences of niobium dopant on the photoelectrochemical performance of SrTiO3 thin films and on the photo-chargeability of SNH electrodes were investigated. With the increase of the niobium content from 0.5 mol.% to 2 mol.% in the SrTiO3 films, the photocurrents, the open-circuit photovoltage of the SrTiO3 thin films and the photochargeability of the SNH electrode increased.
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