Abstract:Diamond is a semiconductor material with remarkable structural, thermal, and electronic properties that has garnered significant interest in the field of electronics. Although hydrogen (H) and oxygen (O) terminations are conventionally favored in transistor designs, alternative options, such as silicon (Si) and germanium (Ge), are being explored because of their resilience to harsh processing conditions during fabrication. Density-functional theory was used to examine the non-oxidized and oxidized group-IV (Si and Ge)-terminated diamond (100) surfaces. The (3 × 1) reconstructed surfaces feature an ether configuration and show relative stability compared with the bare surface. Hybrid-functional calculations of the electronic properties revealed reduced fundamental bandgaps (<1 eV) and lower negative electron affinities (NEAs) than those of H-terminated diamond surfaces, which is attributed to the introduction of unoccupied Si (Ge) states and the depletion of negative charges. Furthermore, oxidation of these surfaces enhanced the stability of the diamond surfaces but resulted in two structural configurations: ether and ketone. Oxidized ether configurations displayed insulating properties with energy gaps of ∼4.3 ± 0.3 eV, similar to H-terminated diamond (100) surfaces, whereas bridged ether configurations exhibited metallic properties. Oxidization of the metallic ketone configurations leads to the opening of relatively smaller gaps in the range of 1.1-1.7 eV. Overall, oxidation induced a shift from NEAs to positive electron affinities, except for the reverse-ordered ketone surface with an NEA of -0.94 eV, a value comparable to the H-terminated diamond (100) surfaces. In conclusion, oxidized group-IV-terminated diamond surfaces offer enhanced stability compared to H-terminated surfaces and display unique structural and electronic properties that are influenced by surface bonding.

Chemisorptions of Atomic Oxygen and Its Replacement by Hydrogen on the Diamond (100) Surface Studied by First Principles

First-principles Study of Oxygenated Diamond (001) Surfaces with and Without Hydrogen

Stability of Oxygenated Groups on Pristine and Defective Diamond Surfaces

Oxygen-induced surface state on diamond (100)

Surface oxygenation studies on (1 0 0)-oriented diamond using an atom beam source and local anodic oxidation

Deuterium-oxygen exchange on diamond (100)—a study by ERDA, RBS and TOF-SIMS

Ab initio insights into the interaction mechanisms between H$_2$, H$_2$O, and O$_2$ molecules with diamond surfaces

Electronic Structures of the Oxygenated Diamond (100) Surfaces

Structure of Reconstructed Cu(100) Surface Induced by Dissociative Adsorption of Gaseous Oxygen

Oxygen-terminated diamond: insights into the correlation between surface oxygen configurations and work function values

XPS analysis of molecular contamination and sp2 amorphous carbon on oxidized (100) diamond

The Atomic Structure and Electronic States of Oxygen- Adsorbed on Cu(110)c(2×1) Surface

Impact-induced Chemisorption of C2H2 on Diamond(001) Surfaces: a Molecular Dynamics Simulation

First-principles investigation of oxidized Si- and Ge-terminated diamond (100) surfaces

Insights into the surface oxidation modification mechanism of nano-diamond: An atomistic understanding from ReaxFF simulations

Decomposition of H2o on Clean and Oxygen-Covered Au (100) Surface: A Dft Study

The interaction of oxygen with the ?-U (001) and (110) surfaces: An ab initio study

Stable Hydroxyl Network on Diamond (001) Via First-Principles and Md Investigation

Electronic Properties of Hydrogen- and Oxygen-Terminated Diamond Surfaces Exposed to the Air

Ab Initio Study of Hydrogen Desorption from Hydrogenated Diamond (100) Surface

Reaction Of Diamond Thin Films With Atomic Oxygen Simulated As Low-Earth-Orbit Environment