Abstract:Diamond is a semiconductor material with remarkable structural, thermal, and electronic properties that has garnered significant interest in the field of electronics. Although hydrogen (H) and oxygen (O) terminations are conventionally favored in transistor designs, alternative options, such as silicon (Si) and germanium (Ge), are being explored because of their resilience to harsh processing conditions during fabrication. Density-functional theory was used to examine the non-oxidized and oxidized group-IV (Si and Ge)-terminated diamond (100) surfaces. The (3 × 1) reconstructed surfaces feature an ether configuration and show relative stability compared with the bare surface. Hybrid-functional calculations of the electronic properties revealed reduced fundamental bandgaps (<1 eV) and lower negative electron affinities (NEAs) than those of H-terminated diamond surfaces, which is attributed to the introduction of unoccupied Si (Ge) states and the depletion of negative charges. Furthermore, oxidation of these surfaces enhanced the stability of the diamond surfaces but resulted in two structural configurations: ether and ketone. Oxidized ether configurations displayed insulating properties with energy gaps of ∼4.3 ± 0.3 eV, similar to H-terminated diamond (100) surfaces, whereas bridged ether configurations exhibited metallic properties. Oxidization of the metallic ketone configurations leads to the opening of relatively smaller gaps in the range of 1.1-1.7 eV. Overall, oxidation induced a shift from NEAs to positive electron affinities, except for the reverse-ordered ketone surface with an NEA of -0.94 eV, a value comparable to the H-terminated diamond (100) surfaces. In conclusion, oxidized group-IV-terminated diamond surfaces offer enhanced stability compared to H-terminated surfaces and display unique structural and electronic properties that are influenced by surface bonding.

Stable Hydroxyl Network on Diamond (001) Via First-Principles and Md Investigation

First-principles Study of Oxygenated Diamond (001) Surfaces with and Without Hydrogen

Ab initio insights into the interaction mechanisms between H$_2$, H$_2$O, and O$_2$ molecules with diamond surfaces

First-principles investigation of oxidized Si- and Ge-terminated diamond (100) surfaces

Adsorption and Thermal Stability of Hydrogen Terminationṇ on Diamond Surface: A First-Principles Study.

Structural and Electronic Properties of Two-Dimensional (110) Diamond Nanofilms by First-Principles Calculations

Stability of Oxygenated Groups on Pristine and Defective Diamond Surfaces

Ab Initio Study of the Hydrogen-Adsorbed Diamond (001) Surface

Ab Initio Study of Hydrogen Desorption from Hydrogenated Diamond (100) Surface

Coherent interfaces with mixed hybridization govern direct transformation from graphite to diamond

Electronic Structures of the Oxygenated Diamond (100) Surfaces

Oxygen-terminated diamond: insights into the correlation between surface oxygen configurations and work function values

Hydroxylated Graphyne and Graphdiyne: First-Principles Study

Ab Initio Study of Hydrogen–Boron Interactions in Diamond Films

Hydration structure of diamondoids from reactive force fields

Electronic Properties of Hydrogen- and Oxygen-Terminated Diamond Surfaces Exposed to the Air

Configuration stability and physical properties of new diamondene structure

Ab initio study of hydrogen-boron interactions in diamond films.

Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study

Hydrogen and oxygen mixed-termination for nitrogen-vacancy quantum sensors in hexagonal diamond

Molecular geometry specific Monte Carlo simulation of the efficacy of diamond crystal formation from diamondoids