Abstract:The conductivity of hydrogen-terminated diamond is a limiting factor in its application in field-effect transistor devices. The traditional preparation process hinders the improvement of the electrical properties of hydrogen-terminated diamond due to impurity elements in the diamond bulk and surface damage caused by processing near the diamond surface. To overcome this, researchers have explored the epitaxial growth of a high-purity and flat-surfaced diamond thin film on a diamond substrate. However, this approach still faces challenges in film characterization and achieving high surface smoothness. In this study, microwave plasma chemical vapor deposition technology is used to epitaxially grow a sub-micron thick diamond film on a nitrogen-doping CVD diamond substrate measuring 10mm x 10mm x 0.5mm. The influence of methane concentrations on the growth and conductivity of diamond films is investigated. The test results reveal that the growth thickness of the diamond film ranges from 230 nm to 810 nm, and the nitrogen concentration in the epitaxial layer is lower than 1×10 16 Atom/cm 3 . Three growth modes are observed for the homoepitaxial growth of the diamond thin film under different methane concentrations. A methane concentration of 4% enables two-dimensional planar growth of diamond, resulting in a smooth and flat surface with a roughness of 0.225nm (10×10μm 2 ). The formation of different surface morphologies is attributed to the growth and etching processes of diamond. Surface LEED testing indicates that the surface of the diamond film undergoes a structural transition from oxygen terminals (1×1: O) to hydrogen terminals (2×1: H) when grown for a short period of time. XPS analysis reveals an extremely low proportion of oxygen and nitrogen elements, giving the grown diamond film P-type conductivity characteristics. The Hall test results demonstrate that the hydrogen-terminated diamond film grown with a methane concentration of 4% exhibits the highest conductivity, with a square resistance of 4981 Ω/□ and a hole mobility of 207 cm 2 /Vs. This enhanced conductivity can be attributed to the lower defect density observed under these specific conditions. The findings of this study contribute to the advancement and practical application of high-power diamond devices by effectively enhancing the electrical characteristics of hydrogen-terminated diamond.

Adsorption and Thermal Stability of Hydrogen Terminationṇ on Diamond Surface: A First-Principles Study.

A Theoretical Study of the Energetic Stability and Electronic Structure of Terminated and P-Doped Diamond (100)-2x1 Surfaces

Growth and Surface Structrue Research of Hydrogen Terminal Diamond Thin Films

Temperature dependence of two-dimensional hole gas on hydrogen-terminated diamond surface

Electronic Properties of Hydrogen- and Oxygen-Terminated Diamond Surfaces Exposed to the Air

Ab Initio Study of Hydrogen Desorption from Hydrogenated Diamond (100) Surface

Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study

Density Functional Theory Study on Hydrogen Adsorption on Be(0001) Surface

Ab Initio Study of the Hydrogen-Adsorbed Diamond (001) Surface

First-principles Study of Oxygenated Diamond (001) Surfaces with and Without Hydrogen

The Microstructures of the Diamond (100) Surfaces with Different Density of Hydrogen Adsorption

Hydrogen Chemisorption on the Ru(0001) Surface

Stable Hydroxyl Network on Diamond (001) Via First-Principles and Md Investigation

Methods for color center preserving hydrogen-termination of diamond

Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electrodes on the same hydrogen-terminated diamond

Surface properties of hydrogenated nanodiamonds: a chemical investigation

First-principles investigation of hydrogen-related reactions on (100)--(2$\times$1)$:$H diamond surfaces

Surface termination of the diamond microchannel and single-phase heat transfer performance

Methods for Color Center Preserving Hydrogen‐Termination of Diamond

Effect of Surface Termination on Electronic Structure of Nano-Crystalline Diamond Film

Heteroatom Functionalization of H-Terminated Diamond Surfaces