Abstract:Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1020 cm–3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonic applications. Er compounds could potentially solve this problem since they contain much higher Er3+ density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor crystal qualities. Recently, we explore a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl) in the form of nanowire, which facilitates the growth of high quality single crystal with relatively large Er3+ density (1.62 × 1022 cm–3). Previous optical results show that the high crystal quality of ECS material leads to a long lifetime up to 1 ms. The Er lifetime-density product was found to be the largest among all the Er containing materials. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement and 30 dB/cm net gain per unit length from a single ECS wire. As a result, such high-gain ECS nanowires can be potentially fabricated into ultra-compact lasers. Even though a single ECS nanowire naturally serves as good waveguide, additional feedback mechanism is needed to form an ultra-compact laser. In this work, we demonstrate the direct fabrication of 1D photonic crystal (PhC) air hole array structure on a single ECS nanowire using focused ion beam (FIB). Transmission measurement shows polarization-dependent stop-band behavior. For transverse electric (TE) polarization, we observed stop-band suppression as much as 12 dB with a 9 μm long airholed structure. Through numerical simulation, we showed that Q-factor as high as 11000 can be achieved at 1.53 μm for a 1D PhC micro-cavity on an ECS nanowire. Such a high Q cavity combined with the high material gain of ECS nanowires provides an attractive solution for ultra-compact lasers, an important goal of this research.

Improved Si/Er Light Emitter by Using Two-Dimensional Plasmonic Crystals

Significant Emission Enhancement of Erbium-Doped Silica by Using the Double Metallic Grating

Strong Enhancement Of Erbium Ion Emission By A Metallic Double Grating

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Plasmonically-Enhanced Mid-Infrared Photoluminescence in A Metal/Narrow-Gap Semiconductor Structure

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Plasmonic Enhancement of Emission from Si-nanocrystals

Optically Pumped Mid-Infrared Light Emitter on Silicon

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots

Spontaneous emission rate enhancement of nano-structured silicon by surface plasmon polariton

Spontaneous Emission Rate and Optical Amplification of Er 3+ in Double Slot Waveguide

Quantification of energy transfer processes from crystalline silicon to Erbium

Fluorescence Optimization and Ratiometric Thermometry of Near-Infrared Emission in Erbium/oxygen-Doped Crystalline Silicon

Stimulated emission at 154 μm from erbium/oxygen-doped silicon-based light-emitting diodes

Characterization of the spin and crystal field Hamiltonian of erbium dopants in silicon

Single Crystal Erbium Compound Nanowires As High Gain Material for On-Chip Light Source Applications

Thermal Radiative Properties of A Photonic Crystal Structure Sandwiched by Sic Gratings

Enhanced Crystallization and Sensitization of Si Nanocrystals in Al2O3:Er/Si:Er Multilayers

Stimulated Emission at 1.54 M from Erbium/oxygen-Doped Silicon-Based Light-Emitting Diodes

Tunable Quantum Dot Arrays As Efficient Sensitizers for Enhanced Near-Infrared Electroluminescence of Erbium Ions.