Abstract:Semiconductor chips are the cornerstone of the information age, which play a vital role in the rapid development of emerging technologies such as big data, machine learning, and artificial intelligence. Driven by the increasing demand for computing power, the chip manufacturing industry has been committed to pursuing higher level of integration and smaller device volumes. As a critical step in the chip manufacturing processes, the etching process therefore faces great challenges. Dry etching (or plasma etching) process based on the low-temperature plasma science and technology is the preferred solution for etching the high-precision circuit pattern. In the low-temperature plasma, electrons obtain energy from the external electromagnetic field and transfer the energy to other particles through collision process. After a series of complex physical and chemical reactions, a large number of active particles such as electrons, ions, atoms and molecules in excited states, and radicals are finally generated, providing the material conditions for etching the substrate. Dry etching chamber is a nonlinear system with multiple space-time dimensions, multiple reaction levels and high complexity. Facing such a complex system, only by fully understanding the basic physical and chemical reaction of the etching process can we optimize the process parameters and improve the etching conditions, so as to achieve precision machining of the semiconductor and meet the growing demand of the chip industry for etching rate and yield. In the early days, the process conditions of dry etching were determined through the trial-and-error method, which is characterized by high cost and low yield. However, with the help of plasma simulation, nowadays people have been able to narrow the scope of experiment to a large extent, and find out efficiently the optimal process conditions in a large number of parameters. In this review, we first introduce the basic theory of the mostly used models for plasma simulation including kinetic, fluid dynamic, hybrid and global models, in which the electron collision cross sections are the key input parameters. Since the formation of the low-temperature plasma is driven by the electron-heavy particle collision processes, and the active species for plasma etching are generated in the reactions induced by electron impact, the accuracy and completeness of the cross-section data greatly affect the reliability of the simulation results. Then, the theoretical and experimental methods for obtaining the cross-section data of etching gases are summarized. Finally, the research status of the electron collision cross sections of etching atoms and molecules is summarized, and the future research prospect is discussed.

Numerical Simulations of Lag Effect in Fixed-Width-Structure Plasma Etching

Molecular Dynamics Simulation of Lag Effect in Fluorine Plasma Etching Si

Modeling and simulation of the lag effect in a deep reactive ion etching process

Sacrificial layer etching in bubble structure

Numerical Simulation And Research On The Electroosmotic Flow In The Curve Channel

Modeling Approach and Analysis of the Structural Parameters of an Inductively Coupled Plasma Etcher Based on a Regression Orthogonal Design

Numerical Simulation of Static Electric Field in Double Glow Discharge and Edge Effect in Vacuum

Optimizing Plasma Etching: Integrating Precise Three-Dimensional Etching Simulation and Machine Learning for Multi-Objective Optimization

Electron collision cross section data in plasma etching modeling

Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method

Numerical Simulation of Heat Transfer and Fluid Flow of a Non-Equilibrium Argon Plasma Jet with Confined Wall

An Optimized-Based Ion Etch Yield Modeling Method in Plasma Etching

Multiscale Simulations of Plasma Etching in Silicon Carbide Structures

Investigation of A Plasma-Etching Process That Uses A Porous Dielectric Template

Two-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Numerical Simulation of Cathode Erosion in EDM Process

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

A Numerical Study of Nanoscale Electrohydrodynamic Patterning in A Liquid Film

2-D Dynamical Simulation of Laser-Supported Plasma Flow Field

Study of residual stress-induced deformation of multilayer cantilever for maskless microplasma etching