Organic Field-Effect Transistors Based on Anthracene

LI Dong-cang,WANG Peng,CHEN Jin-huo,HU Jia-xing,ZHANG Fu-jia
DOI: https://doi.org/10.3969/j.issn.1007-4252.2006.02.018
2006-01-01
Abstract:An organic field-effect transistor was fabricated.The organic semiconducting anthracene by vacuum evaporation serves as active layer, and the epoxy resin by spin coating serves as insulator layer.It is an organic field-effect transistor with inverted staggered structure.The highest mobility of the device is 5.76×10~(-2)cm~2/V·s,its transconductance is 0.96μS.Measurements show good output characteristics of this device.
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