Abstract:With the rapid development of wireless communications, GaN HEMTs, which have various advantages of high power density, high electron mobility, and high breakdown threshold, have attracted increasing attention. Microwave power amplifiers based on GaN HEMTs are widely used in many fields, such as communication, medical, and detection instruments. In the accurate design of GaN microwave power amplifiers, reliable RF large signal models are vitally important. In this paper, a scalable large-signal model based on EEHEMT model is proposed to describe the properties of multifinger AlGaN/GaN high electrom mobility transistors (HEMTs) accurately. A series of scaling rules are established for the intrinsic parameters of the device, including drain-source current I ds , input capacitance C gs and C gd , which take into account both the gate width of a single finger and the number of gate fingers. With the proposed scalable large-signal model, the performances of the L-band GaN high-efficiency power amplifier with the length of gate of 14.4mm is analyzed. This amplifier demonstrates outstanding performance with the output power up to 46.5dBm and the drain efficiency of over 70% covering the entire frequency range from 1120MHz to 1340MHz. Great agreement between the simulations and experiments is achieved, demonstrating the excellent accuracy of the proposed model. Moreover, the proposed model can further predict the performance of high-order harmonics, providing an effective tool for the design of advanced high-power and high-efficiency microwave power amplifiers. Certainly, the EEHEMT model lacks the ability to characterize the dynamical behavior induced by trap and self-heating effects. Thus, for further consideration, scaling models for the thermal resistance and heat capacity will be investigated to broaden the applicability of the proposed model in the case of continuous waves.

Microwave noise modeling for algaas/ingaas/gaas PHEMTS

A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

A New Meshing Criterion for the Equivalent Thermal Analysis of GaAs PHEMT MMICs.

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

A Compact Model for Dual-Gate GaAs PHEMT and Application for Power Amplifier Design

Equivalent method of GaAs PHEMT MMIC for thermal simulation

High Frequency Noise Model of AlGaN/GaN HEMTs

Modeling Heat Generation in High Power Density Nanometer Scale Gaas/Ingaas/Algaas Phemt

An improved noise model of InP HEMT for millimeter wave application

A new analytical high frequency noise parameter model for AlGaN/GaN HEMT

Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation

A large signal scaling model of high power GaN microwave device

Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology

Reliable noise modeling of GaN HEMTs for designing low‐noise amplifiers