Determination of Elastic Modulus of Silicon Carbide (sic) Thin Diaphragms Via Mode-Dependent Duffing Nonlinear Resonances
Hailong Chen,Hao Jia,Christian A. Zorman,Philip X. -L. Feng
DOI: https://doi.org/10.1109/jmems.2020.3020568
IF: 2.829
2020-01-01
Journal of Microelectromechanical Systems
Abstract:We report on a non-destructive, on-chip technique for determining the elastic modulus ( $E_{\mathrm {Y}}$ ) of silicon carbide (SiC) thin diaphragms by measuring their nonlinear resonances. Departing from the conventional static load-deflection techniques ( e.g. , beam bending, membrane bulging and nanoindentation), the nonlinear resonance approach enables characterizing mechanical properties without risk to the microdevices, bypassing complicated contact-mode sample preparation, and bulky, expensive apparatus. We derive the mode-dependent Duffing resonances of the diaphragms in the ‘membrane’ regime, and correlates $E_{\mathrm {Y}}$ with the Duffing ‘backbone’ curve. To verify our model, we fabricate SiC square diaphragms (1mm $\times 1$ mm $\times 2~\mu \text{m}$ ) that exhibit multimode resonances up to 500kHz and quality ( $Q$ ) factors up to 16,000. Taking the device’s (2,2) mode as an example, we obtain $E_{\mathrm {Y}} = 436\,\,\pm \,\,27$ GPa via its Duffing nonlinear response. The technique can be readily and widely extended to other thin films and MEMS/NEMS resonators. [2020-0209]