Study on In-Plane Optical Anisotropy of Semiconductor Materials by Reflectance Difference Spectroscopy

Zhao Lei,Chen Yong-hai,Zuo Yu-hua,Wang Hai-ning,Shi Wen-hua
DOI: https://doi.org/10.3321/j.issn:1000-0593.2006.07.001
2006-01-01
Spectroscopy and spectral analysis
Abstract:In the present review, the measuring principle of reflectance difference spectroscopy (RDS) is given. As a powerful tool in the surface and interface analysis technologies, the application of RDS to the research on semiconductor materials is summarized. along with the origins of the in-plane optical anisotropy of semiconductors. And it is believed that RDS will play an important role in the electrooptic modification of Si-based semiconductor materials.
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