Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Wavelength-dependent anisotropic light-matter interaction in 2D ferroelectric In2Se3

Strong Anisotropic Two-Dimensional In2Se3 for Light Intensity and Polarization Dual-Mode High-Performance Detection.

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Raman Anisotropy and Polarization-Sensitive Photodetection in 2D Bi2O2Se–WSe2 Heterostructure

Spatially Resolved Light-Induced Ferroelectric Polarization in α-In2Se3/Te Heterojunctions

Probing the electric and thermoelectric response of ferroelectric 2H and 3R α-In2Se3

Anisotropic light-matter interactions in the single-crystal topological insulator bismuth selenide

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Utilizing Polarization and Multidimensional Spatial Angle‐Resolved Spectroscopy to Reveal the Optical Anisotropy of Few‐Layer Bi2O2Se

Picometer‐Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe

Direct Observation of Linear Dichroism Transition in Two-dimensional Palladium Diselenide.

Van Der Waals Interlayer Coupling Induces Distinct Linear Dichroism in WSe2 Photodetectors

Ferroelectric-Tunable Photoresponse in Α- In2Se3 Photovoltaic Photodetectors: an Ab Initio Quantum Transport Study

In-Plane Ferrielectric Order in van der Waals β'-In2Se3

Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials

Anisotropic Nonlinear Optical Properties of a SnSe Flake and a Novel Perspective for the Application of All‐Optical Switching

Strain Engineering the Ferroelectric Polarization and Optical Absorption in the FE-In<sub>2</sub>Se<sub>3</sub> Monolayer

3D Domain Arrangement in van der Waals Ferroelectric α‐In2Se3

Valence mediated tunable magnetism and electronic properties by ferroelectric polarization switching in 2D FeI/InSe van der Waals heterostructures.