The graded optical band gap (GBG) in hydrogenated nanoamorphous silicon(na-Si:h) solar cells prepared by PECVD

Huacong Yu,Rongqiang Cui,Fanying Meng,Zhanxia Zhao,He Wang,Hong Yang,Yuliang He
2005-01-01
Abstract:The paper report the up to date research on the intrinsic hydrogenated nanoamorphous silicon(na-Si:H) layer with the graded band gap (GBG) in p-i-n solar cells prepared by PECVD in varying the processing parameters. The optical band gap(Eg opt) derived from Tauc plot. We have carried out a investigation of the relationships between the Eg opt with the crystallization ratio(Xc) and the Eg opt with the nanocrystalline grain size(D) in na-Si:H thin films grown by PECVD on glass substrates through XRD, Raman scattering, transmission. The Eg opt increase with the decreases of the crystallization ratio(Xc) and the nanocrystalline grain size(D)?But with the increase of the Bias DC Voltage. The hydrogen dilution ratio is found to increase basically both the crystallization ratio (Xc) and the nanocrystalline grain size (D). According the simulated and optimized the band gap figure of solar cells by AMPS-1D, we utilized all the relationship to tune the band gap of i na-Si:H layer of p-i-n solar cells prepared by PECVD in varying the processing parameters(the Bias DC Voltage and the hydrogen dilution ratio), got the graded band gap (GBG) in the i type na-Si:H in p-i-n solar cells, then enhanced this kind of solar cell's conversion efficiency to 8.467% (solar cell's active area: 2000mm2(40mm 50mm), AM1.5,1000W/m2, 25°C). Two relationships in na-Si:H are discussed by the etching effect of atomic hydrogen in the framework of the growth mechanism and the quantum size effect (QSE) .Because the nanocrystalline silicon speciality, the nanoamorphous silicon solar cells is better temperature and irradiation stability, so it can be used in the concentration solar cells. This result will improve heat sinking, long-term behavior, cell degradation, and reliability, reduced the system cost accordingly.
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