A Typical Magnetic Tunnel Junction Material and Effects of Tunnel Magneto-Resistance
韩秀峰,刘厚方,张佳,师大伟,刘东屏,丰家峰,魏红祥,王守国,詹文山
DOI: https://doi.org/10.7502/j.issn.1674-3962.2013.06.02
2013-01-01
Abstract:A typical magnetic tunnel junction (MTJ) consists of a thin insulating layer (a tunnel barrier), sandwiched by two ferromagnetic electrode layers. When the relative magnetic configuration of both ferromagnetic electrode layers changes from parallel state to anti-parallel state with external magnetic field, the resistance of MTJ would become high from low, exhibiting tunnel magneto-resistance (TMR) due to spin-dependent electron tunnelling. Amorphous AlOx barrier MTJs were extensively studied and have been used in magneto-resistance random access memory (MRAM) and read heads of hard disk drives, since the discovery of room-temperature TMR in 1995. However, the spin electronic devices development of the next-generation high-speed, low-power-consumption and high-performance need much higher TMR ratio and a novel structure. In 2001, the first-principle calculation predicted that the TMR ratio of epitaxial Fe (001)/MgO (001)/Fe (001) MTJs would be over 1 000%, due to spin filter effect of MgO barrier for different symmetry spin polarized electron. In 2004 TMR ratios of about 200% were obtained in MTJs with a single-crystal MgO (001) barrier or a textured MgO (001) barrier. In 2008, the TMR ratio of 604% has been reported in pseudo-spin-valve MTJs with core structure of CoFeB/MgO/CoFeB. Recently, Quantum well (QW) resonances tunneling and spin-dependent Coulomb blockade magneto-resistance (CBMR) effect in MgO-barrier MTJs were proposed and demonstrated in theories and experiments. Magnetic sensors, MRAM, spin nano-oscillator and microwave detector based on MTJs have attracted attention of electron science and devices. In the paper we briefly introduced the investigation and development of magnetic tunnel junction material and its device applications.